IS43R16160B-5TLI

The IS43R16160B-5TLI is a 256 Mbit double data rate (DDR) synchronous DRAM organized as 16M × 16 with a parallel SSTL_2 interface. It implements a DDR architecture with bidirectional data strobe (DQS), differential clock inputs and an internal DLL for aligned data timing.

Designed for applications that require compact, high-speed parallel memory, the device delivers up to 200 MHz clock operation, low-voltage 2.3 V–2.7 V operation, and an industrial operating temperature range of −40°C to +85°C.

Key Features

• Core Memory Architecture 256 Mbit DDR Synchronous DRAM organized as 4 banks of 4,194,304 words × 16 bits (16M × 16).
• Double Data Rate Operation Two data transfers per clock cycle with bidirectional DQS and differential clock inputs (CLK and /CLK).
• Timing and Performance Supports up to 200 MHz clock frequency (depending on CAS latency), programmable CAS latency (2, 2.5, 3) and programmable burst lengths (2/4/8).
• Data Alignment and Integrity Internal DLL aligns DQ and DQS transitions with CLK; data and data mask are referenced to both edges of DQS.
• Refresh and Power Control 8192 refresh cycles per 64 ms with Auto Refresh and Self Refresh support; Auto Precharge / All Bank Precharge controlled via address pins.
• Electrical Low-voltage supply: VDD/VDDQ = 2.5 V nominal, operating range 2.3 V–2.7 V.
• Package and Temperature 66-pin TSOP II (66‑TSSOP, 0.400" / 10.16 mm width) for x16 devices; industrial operating temperature −40°C to +85°C.
• Access and Cycle Times Typical access time from clock ±0.70 ns (depending on CAS latency setting) and write cycle time (word page) of 15 ns.

Typical Applications

• Embedded memory expansion — Parallel DDR interface and 16M × 16 organization provide compact on-board DRAM for embedded processing systems.
• High-speed buffering — DDR transfers with DQS and differential clock inputs support applications requiring fast parallel data buffering at up to 200 MHz clock rates.
• System memory for industrial equipment — Industrial temperature range (−40°C to +85°C) and low-voltage operation suit memory subsystems in industrial electronics.

Unique Advantages

• DDR data throughput: Double data rate architecture enables two data transfers per clock cycle, increasing effective bandwidth without raising clock frequency.
• Robust timing control: Internal DLL and DQS-based data alignment reduce setup/hold timing margins and simplify timing closure.
• Flexible latency and burst modes: Programmable CAS latencies and burst lengths allow tuning for system-level performance and access patterns.
• Low-voltage operation: 2.3 V–2.7 V supply range supports lower-power system designs while maintaining DDR performance characteristics.
• Compact package: 66‑TSSOP (TSOP II) x16 package enables dense PCB implementations where board space is constrained.

Why Choose IS43R16160B-5TLI?

The IS43R16160B-5TLI provides a compact, low-voltage DDR SDRAM option with programmable timing and burst modes, internal DLL-based alignment, and support for high-speed parallel operation up to 200 MHz. Its 16M × 16 organization and 66‑TSSOP II packaging make it suitable for designs requiring moderate-capacity, high-throughput memory in a small footprint.

This device is appropriate for engineers building embedded systems, buffering subsystems, and industrial electronics that need deterministic DDR behavior, refresh control, and a broad operating temperature range.

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