IS43LQ32K01S2A-053BLI

32G, 1.06-1.17/1.70-1.95V, LPDDR
Part Description

32G, 1.06-1.17/1.70-1.95V, LPDDR

Quantity 101 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time24 Weeks
Datasheet

Specifications & Environmental

Device Package200-TFBGA (10x14.5)Memory FormatDRAMTechnologySDRAM - Mobile LPDDR4X
Memory Size32 GbitAccess Time3.5 nsGradeAutomotive
Clock Frequency1.866 GHzVoltage0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95VMemory TypeVolatile
Operating Temperature-40°C ~ 95°C (TC)Write Cycle Time Word Page18 nsPackaging200-TFBGA
Mounting MethodVolatileMemory InterfaceLVSTLMemory Organization1G x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.0036

Overview of IS43LQ32K01S2A-053BLI - 32Gb LPDDR4X SDRAM

The IS43LQ32K01S2A-053BLI is a 32-gigabit mobile LPDDR4X SDRAM designed for power-sensitive applications requiring high-speed memory performance. Organized as 1G x 32, this volatile memory solution delivers 1866MHz clock frequency with ultra-low voltage operation across multiple supply rails. With an extended temperature range and compact 200-TFBGA package, this SDRAM addresses the demanding requirements of mobile computing, embedded systems, and portable devices.

Key Features

  • High-Density Memory - 32Gb (4GB) capacity organized as 1G x 32, providing substantial memory resources for data-intensive mobile and embedded applications.
  • LPDDR4X Technology - Mobile SDRAM architecture optimized for low power consumption while maintaining high performance, ideal for battery-powered devices.
  • Multi-Rail Power Supply - Operates across three voltage rails (0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V) for optimized power efficiency and compatibility with modern low-power system designs.
  • High-Speed Performance - 1866MHz clock frequency with 3.5ns access time delivers responsive data throughput for demanding applications.
  • Extended Temperature Range - Operating range of -40°C to 95°C (case temperature) ensures reliable operation in harsh environmental conditions.
  • Compact Package - 200-pin TFBGA (10x14.5mm) footprint enables high-density board layouts critical for space-constrained mobile and embedded designs.

Typical Applications

  • Smartphones and Tablets - This LPDDR4X SDRAM provides the primary system memory for mobile devices where low power consumption extends battery life while delivering the high bandwidth needed for multitasking and multimedia applications.
  • Automotive Infotainment Systems - The extended temperature range and reliable LPDDR4X technology make this memory suitable for in-vehicle displays and entertainment systems that must operate across extreme ambient conditions while maintaining responsive performance.
  • IoT Edge Devices - High-density 32Gb capacity combined with ultra-low voltage operation enables sophisticated edge computing devices to process and buffer data locally while minimizing power draw from limited energy sources.
  • Portable Medical Equipment - The combination of compact packaging, extended temperature tolerance, and low power operation supports portable diagnostic devices that require reliable memory performance in varied clinical environments.
  • Industrial Handheld Terminals - This SDRAM provides sufficient memory capacity for ruggedized portable scanners and data collection devices used in warehouse and field applications where temperature extremes and power efficiency are critical.

Unique Advantages

  • Power Efficiency for Battery Life: LPDDR4X technology with multi-rail voltage optimization significantly reduces power consumption compared to standard DDR, extending operating time in portable and battery-powered applications.
  • Thermal Reliability: -40°C to 95°C case temperature rating ensures consistent performance in automotive, industrial, and outdoor applications where conventional memory solutions may fail or require additional thermal management.
  • Design Flexibility: Multi-voltage rail support allows system designers to optimize power delivery networks for specific application requirements, simplifying power management circuitry.
  • Space-Efficient Integration: Compact 200-TFBGA package with 10x14.5mm footprint reduces PCB real estate requirements, enabling smaller product form factors without sacrificing memory capacity.
  • High Data Throughput: 1866MHz clock frequency with low 3.5ns access time supports responsive user experiences and real-time data processing in performance-sensitive mobile and embedded applications.
  • Supply Chain Availability: Active lifecycle status from ISSI provides confidence in long-term product availability for designs requiring extended production lifecycles.

Why Choose IS43LQ32K01S2A-053BLI?

The IS43LQ32K01S2A-053BLI represents an optimal balance of capacity, performance, and power efficiency for modern mobile and embedded system designs. Its LPDDR4X architecture delivers the high bandwidth required by contemporary applications while maintaining the ultra-low power consumption critical to battery-operated devices. The extended temperature range positions this memory solution for industrial and automotive applications where standard commercial-grade components cannot reliably operate.

System designers benefit from the flexibility of multiple voltage rails and the space savings of the compact TFBGA package, simplifying board layout while reducing overall system cost. Whether developing next-generation mobile devices, automotive infotainment systems, or industrial IoT solutions, this SDRAM provides a reliable, efficient memory foundation with the long-term availability needed for production continuity.

Contact Us for Availability and Pricing

For current pricing, volume discounts, and lead time information on the IS43LQ32K01S2A-053BLI, please contact our sales team. Our technical support staff can also assist with design-in guidance, reference designs, and integration support to help you bring your product to market faster.

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