IS43R16160B-6TL-TR

The IS43R16160B-6TL-TR is a 256 Mbit double data rate (DDR) synchronous DRAM organized as 16M × 16 with a parallel memory interface. It implements DDR architecture with an SSTL_2 interface and supports high-speed operation for applications requiring compact, board-level DRAM in a 66-pin TSOP II package.

Key device characteristics from the datasheet include support for up to 200 MHz clock rates, an access time around ±0.70 ns, flexible burst and CAS latency programming, and standard commercial temperature range operation.

Key Features

• Memory Architecture 4-bank DDR synchronous DRAM organized as 16M × 16 for a total of 256 Mbit of memory.
• Double Data Rate (DDR) Two data transfers per clock cycle with bidirectional data strobe (DQS) and differential clock inputs (CLK and /CLK).
• Interface and Signaling SSTL_2-compatible interface with data and data mask referenced to both edges of DQS; commands entered on positive CLK edge.
• Performance and Timing Datasheet specifies access time around ±0.70 ns and supports programmable CAS latencies (2.0 / 2.5 / 3.0) and burst lengths (2 / 4 / 8).
• Clock Rate Typical product spec lists 166 MHz operation; datasheet indicates the device can achieve clock rates up to 200 MHz depending on timing configuration.
• Voltage and Power Nominal supply operation specified at VDD = VDDQ = 2.5 V with allowable supply range 2.3 V to 2.7 V.
• Refresh and Self-Refresh Supports standard auto-refresh and self-refresh with 8,192 refresh cycles per 64 ms (4-bank concurrent refresh).
• Package and Mounting 66-pin TSOP II (66-TSSOP) package with 0.400" (10.16 mm) width for board-level mounting and compact footprint.
• Operating Temperature Commercial temperature range specified: 0°C to +70°C (TA).

Typical Applications

• Systems requiring parallel DDR memory Use where a 256 Mbit DDR synchronous DRAM with parallel interface and SSTL_2 signaling is needed.
• Space-constrained board designs Compact 66-TSOP II package suits layouts with limited PCB area while providing 16M × 16 memory organization.
• High-rate data buffering Suitable for designs that require double data rate transfers and programmable CAS/burst settings up to the device’s supported clock rates.

Unique Advantages

• DDR data throughput Double data rate architecture and bidirectional DQS enable data transfers on both clock edges, improving effective data bandwidth.
• Flexible timing Programmable CAS latency and burst length provide designers control over latency and transfer granularity to match system timing.
• High-speed capability Datasheet support for up to 200 MHz clock operation allows headroom for higher-performance timing modes where needed.
• Compact package 66-TSSOP (TSOP II) package offers a small board footprint while delivering 256 Mbit density in a single device.
• Standardized refresh and power Standard auto-refresh/self-refresh modes and a defined supply range (2.3 V–2.7 V) simplify power and memory management.

Why Choose IS43R16160B-6TL-TR?

The IS43R16160B-6TL-TR positions itself as a compact, board-mountable 256 Mbit DDR synchronous DRAM offering flexible timing configuration and SSTL_2 signaling. Its combination of 16M × 16 organization, programmable CAS/burst modes, and documented high-speed capability up to 200 MHz makes it suitable for designs that need parallel DDR memory in a 66-pin TSOP II footprint.

This device is appropriate for engineers and procurement teams specifying commercial-temperature DDR memory with defined supply and timing characteristics, where a small package and standard refresh/self-refresh behavior are required.

If you need pricing, availability, or a formal quote for IS43R16160B-6TL-TR, request a quote or submit an inquiry to sales for further assistance and lead-time information.