IS43LQ32K01S2A-053BLI-TR

The IS43LQ32K01S2A-053BLI-TR is a 32 Gbit volatile SDRAM device implemented as Mobile LPDDR4X memory. It delivers a 1G × 32 organization with a high clock frequency and fast access time for memory-dense mobile and embedded applications.

Designed for systems requiring compact packaging and multi-voltage operation, the device targets mobile and embedded designs that need high-speed DRAM, low-voltage operation domains, and extended operating temperature range.

Key Features

• Core Technology Mobile LPDDR4X SDRAM architecture supporting a 1G × 32 memory organization for high-density DRAM implementations.
• Density & Organization 32 Gbit memory size arranged as 1G × 32 to support wide data paths and large working memory footprints.
• Performance 1.866 GHz clock frequency with a 3.5 ns access time and 18 ns write cycle time (word/page), delivering high-speed read/write responsiveness.
• Multi‑Rail Voltage Supply Supports supply domains at 0.57–0.65 V, 1.06–1.17 V, and 1.70–1.95 V to accommodate LPDDR4X multi-voltage operation.
• Interface LVSTL memory interface for signalling.
• Package 200-TFBGA package (10 × 14.5 mm) for compact board-level integration.
• Operating Temperature -40 °C to 95 °C (TC) rating for extended temperature range operation.

Typical Applications

• Mobile Devices — High-density LPDDR4X memory for smartphones, tablets, and other portable equipment requiring compact, high-speed DRAM.
• Embedded Systems — On-board working memory for embedded platforms that benefit from wide data paths and fast access times.
• Consumer Electronics — Memory for handheld and compact consumer devices where package size and multi-voltage operation are important.

Unique Advantages

• High memory density: 32 Gbit capacity in a 1G × 32 organization enables larger application working sets without multiple devices.
• High-speed operation: 1.866 GHz clock and 3.5 ns access time provide low-latency data access for performance-sensitive workloads.
• Multi-voltage support: Separate supply ranges (0.57–0.65 V, 1.06–1.17 V, 1.70–1.95 V) enable compatibility with LPDDR4X power domains and system power architectures.
• Compact package: 200-TFBGA (10 × 14.5 mm) package minimizes board area for space-constrained designs.
• Extended temperature range: -40 °C to 95 °C operation supports applications exposed to wide environmental conditions.

Why Choose 32G, 1.06-1.17/1.70-1.95V, LPDDR?

The IS43LQ32K01S2A-053BLI-TR positions itself as a high-density, high-speed Mobile LPDDR4X SDRAM solution suited for compact, performance-focused designs. Its combination of 32 Gbit capacity, 1.866 GHz clocking, multi-rail voltage support, and a space-saving 200-TFBGA package makes it appropriate for engineers designing memory-intensive mobile and embedded products.

This device is appropriate for designs that require scalable DRAM capacity, fast access characteristics, and the ability to operate across an extended temperature range, offering a clear technical fit where those parameters are primary selection criteria.

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