IS43DR86400E-3DBLI-TR

The IS43DR86400E-3DBLI-TR is a 512 Mbit volatile DRAM organized as 64M × 8 using DDR2 SDRAM architecture. It provides a parallel memory interface optimized for designs requiring synchronous DDR2 operation at up to 333 MHz clock frequency.

With a 1.7 V to 1.9 V supply range and an operating temperature span from −40 °C to 85 °C, this device is intended for systems that require compact, board-mounted DDR2 memory in a 60-ball thin wafer BGA package.

Key Features

• Memory Core 512 Mbit DRAM organized as 64M × 8, implemented as DDR2 SDRAM for synchronous parallel operation.
• Performance 333 MHz clock frequency and 450 ps access time provide the timing characteristics defined for this DDR2 device; write cycle (word page) time is 15 ns.
• Power Specified supply voltage range of 1.7 V to 1.9 V to support standard DDR2 power domains.
• Package Supplied in a 60-ball thin wafer BGA package (60-TWBGA, 8 × 10.5 mm), suitable for surface-mount PCB assembly.
• Environment Operating ambient temperature range from −40 °C to 85 °C (TA) for a wide range of thermal conditions.
• Interface Parallel memory interface compatible with DDR2 SDRAM signaling and system designs.

Typical Applications

• Embedded memory subsystems — Provides board-mounted DDR2 volatile storage for systems requiring synchronous parallel memory.
• Consumer and industrial electronics — Fits compact designs where a 60-ball BGA memory footprint and defined temperature range are needed.
• Data buffering and working memory — Suited for applications that leverage DDR2 timing characteristics (333 MHz clock, 15 ns write cycle) for transient data storage.

Unique Advantages

• DDR2 synchronous architecture: Delivers predictable timing with a 333 MHz clock and 450 ps access time for systems designed around DDR2 protocols.
• Compact BGA package: The 60-TWBGA (8 × 10.5 mm) footprint enables space-efficient board layouts while maintaining ball-grid mounting for automated assembly.
• Wide operating temperature: Rated from −40 °C to 85 °C, supporting deployment across varied thermal environments.
• Industry-standard supply voltage: 1.7 V to 1.9 V operation aligns with common DDR2 power rails for straightforward integration.
• Clear memory organization: 64M × 8 configuration simplifies memory mapping and system design considerations.

Why Choose IS43DR86400E-3DBLI-TR?

This IS43DR86400E-3DBLI-TR device positions itself as a compact, board-mounted DDR2 DRAM option that balances density (512 Mbit) with defined DDR2 timing and power characteristics. Its 60-ball BGA package and specified operating range make it appropriate for designs that require a synchronous parallel DRAM solution with predictable electrical and timing parameters.

Engineers and procurement teams seeking a standard DDR2 memory component for embedded or industrial designs will find clear specification values—organization, clock, access time, supply voltage, and temperature—allowing for straightforward integration and validation in target systems.

Request a quote or submit an inquiry to obtain pricing, availability, and ordering information for the IS43DR86400E-3DBLI-TR.