IS43DR86400E-3DBLI
| Part Description |
IC DRAM 512MBIT PAR 60TWBGA |
|---|---|
| Quantity | 1,029 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TWBGA (8x10.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 450 ps | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS43DR86400E-3DBLI - 512Mbit DDR2 SDRAM
The IS43DR86400E-3DBLI is a 512Mbit DDR2 SDRAM designed for high-performance memory applications requiring fast data access and reliable operation across extended temperature ranges. Built with a 64M x 8 organization and 333MHz clock frequency, this volatile memory IC delivers efficient parallel data transfer in compact, space-constrained designs. Its industrial temperature rating makes it well-suited for embedded systems, networking equipment, and ruggedized computing platforms.
Key Features
- DDR2 SDRAM Technology - Provides double data rate synchronous dynamic random access memory with 333MHz clock operation for efficient data throughput in memory-intensive applications.
- Memory Organization - 64M x 8 configuration delivers 512Mbit total capacity with parallel interface architecture optimized for 8-bit data paths.
- Fast Access Time - 0.45ns access time enables rapid data retrieval and low-latency memory operations critical for real-time processing.
- Write Cycle Performance - 15ns write cycle time supports high-speed data storage operations without bottlenecking system performance.
- Industrial Temperature Range - Rated for -40°C to 85°C ambient operation, ensuring reliable performance in harsh environmental conditions.
- Compact Package - 60-TWBGA (8x10.5mm) footprint minimizes board space requirements while maintaining robust thermal and electrical characteristics.
- Low Voltage Operation - 1.7V to 1.9V supply voltage reduces power consumption and heat generation in battery-powered and thermally-sensitive applications.
Typical Applications
- Industrial Automation - This DDR2 SDRAM provides reliable memory for programmable logic controllers (PLCs), human-machine interfaces (HMIs), and factory automation systems where extended temperature tolerance ensures consistent operation in manufacturing environments exposed to temperature fluctuations.
- Networking Equipment - The parallel interface and fast access times make this memory ideal for routers, switches, and network processors that require buffering and packet processing capabilities with minimal latency in data transmission.
- Embedded Computing Systems - The compact TWBGA package and industrial temperature rating support embedded applications in transportation, medical devices, and point-of-sale terminals where space constraints and environmental durability are critical design factors.
- Telecommunications Infrastructure - Base stations, optical network equipment, and telecom servers utilize this SDRAM for temporary data storage and processing in systems that demand reliable performance across varying operational conditions.
- Test and Measurement Instruments - High-speed data acquisition systems and oscilloscopes leverage the fast write cycle time and access speed to capture and process transient signals without data loss.
Unique Advantages
- Extended Temperature Reliability: -40°C to 85°C operation eliminates the need for additional thermal management in industrial applications, reducing system complexity and cost.
- Space-Efficient Design: The 60-pin TWBGA package delivers high density memory in a compact 8x10.5mm footprint, enabling smaller form factor designs without sacrificing memory capacity.
- Low Power Consumption: 1.7V to 1.9V supply voltage reduces overall system power draw and extends battery life in portable and remote monitoring equipment.
- Proven DDR2 Architecture: Leverages mature, well-understood SDRAM technology with broad ecosystem support for controllers, reference designs, and development tools.
- Parallel Interface Simplicity: Direct memory access without complex serial protocols simplifies board design and reduces software overhead in microcontroller and processor-based systems.
- Fast Data Throughput: 333MHz clock operation and 0.45ns access time minimize memory latency, improving overall system responsiveness in time-critical applications.
Why Choose IS43DR86400E-3DBLI?
The IS43DR86400E-3DBLI combines proven DDR2 SDRAM technology with industrial-grade temperature performance and compact packaging, making it an excellent choice for embedded and industrial designs requiring reliable, cost-effective volatile memory. Its parallel interface architecture provides straightforward integration with a wide range of processors and controllers, while the extended temperature rating ensures consistent operation in challenging environments without additional cooling infrastructure.
For applications where board space is limited, power budgets are constrained, and environmental conditions are demanding, this 512Mbit SDRAM delivers the balance of performance, reliability, and physical footprint needed in modern industrial and embedded computing platforms.
Get Started
Contact our technical sales team to discuss your specific memory requirements and request a quote for the IS43DR86400E-3DBLI. Our engineers can provide application support, reference designs, and volume pricing to help you integrate this DDR2 SDRAM into your next project.