IS43DR86400E-3DBL

The IS43DR86400E-3DBL is a 512 Mbit volatile SDRAM implemented as DDR2 parallel memory with a 64M x 8 organization. It delivers DDR2-class timing with a 333 MHz clock frequency and a 1.7 V to 1.9 V supply window for low-voltage operation.

This device is intended for designs that require a compact, high-density parallel DRAM solution in a 60-TWBGA (8 x 10.5 mm) package and supports applications needing sub-nanosecond access and standard DDR2 interface behavior within a 0 °C to 85 °C operating range.

Key Features

• Memory Type & Architecture 512 Mbit DDR2 SDRAM organized as 64M x 8, providing byte-wide parallel memory access.
• Performance 333 MHz clock frequency and an access time of 450 ps for DDR2 parallel operation.
• Voltage Low-voltage operation with a supply range of 1.7 V to 1.9 V.
• Timing Write cycle time (word/page) specified at 15 ns to support DDR2 timing requirements.
• Package 60-TWBGA package (8 × 10.5 mm) suitable for space-constrained board layouts.
• Operating Range Specified operating temperature range from 0 °C to 85 °C (TC).
• Interface Parallel memory interface compatible with systems designed for DDR2 parallel DRAM devices.

Typical Applications

• System Memory — Use as 512 Mbit parallel DDR2 SDRAM for system-level volatile storage where a 64M × 8 organization is required.
• Data Buffering — Employed for buffering and temporary storage in designs that require DDR2 parallel access with sub-nanosecond access times.
• Compact Board Designs — Suitable for space-limited PCBs that benefit from the 60-TWBGA (8 × 10.5 mm) package footprint.

Unique Advantages

• Density with Byte-wide Access: 512 Mbit capacity organized as 64M × 8 enables byte-wide parallel data transfers for straightforward interface integration.
• DDR2 Performance: 333 MHz clock and 450 ps access time provide timing characteristics aligned with DDR2 parallel memory requirements.
• Low-Voltage Operation: 1.7 V–1.9 V supply reduces power envelope compared with higher-voltage memory options while matching DDR2 low-voltage standards.
• Compact BGA Package: 60-TWBGA (8 × 10.5 mm) package minimizes PCB area for high-density designs.
• Predictable Timing: Specified 15 ns write cycle time (word/page) supports deterministic memory timing for system designers.
• Wide Commercial Temperature Range: Rated for 0 °C to 85 °C to meet common commercial environmental requirements.

Why Choose IC DRAM 512MBIT PAR 60TWBGA?

The IS43DR86400E-3DBL positions itself as a straightforward DDR2 parallel DRAM option delivering 512 Mbit density, DDR2-class timing, and low-voltage operation in a compact 60-TWBGA package. Its 64M × 8 organization and specified timing/voltage parameters make it suitable for designs that require predictable DDR2 parallel memory behavior and a small PCB footprint.

This device is well suited to system designers seeking a verified-density DDR2 parallel memory component with defined electrical and timing characteristics, offering a balance of capacity, performance, and compact packaging for commercial-temperature applications.

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