IS43DR86400E-25DBL-TR
| Part Description |
IC DRAM 512MBIT PAR 60TWBGA |
|---|---|
| Quantity | 794 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 10 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TWBGA (8x10.5) | Memory Format | DRAM | Technology | SDRAM - DDR2 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 400 ps | Grade | Commercial (Extended) | ||
| Clock Frequency | 400 MHz | Voltage | 1.7V ~ 1.9V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 85°C (TC) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | SSTL_18 | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of IS43DR86400E-25DBL-TR – IC DRAM 512MBIT PAR 60TWBGA
The IS43DR86400E-25DBL-TR is a 512 Mbit DDR2 SDRAM organized as 64M × 8, designed for volatile memory applications. It delivers DDR2-class operation with a 400 MHz clock frequency and an SSTL_18 memory interface, packaged in a compact 60-ball thin/wide BGA.
This device is suitable for systems that require a low-voltage DDR2 memory solution with defined timing characteristics and an operating temperature range of 0°C to 85°C (TC).
Key Features
- Memory Core 512 Mbit DRAM organized as 64M × 8, implemented as DDR2 SDRAM (volatile memory).
- Performance 400 MHz clock frequency with an access time of 400 ps and a write cycle time (word/page) of 15 ns.
- Interface SSTL_18 memory interface for standard DDR2 signaling.
- Power Supply voltage range of 1.7 V to 1.9 V supporting low-voltage DDR2 operation.
- Package Available in a 60-ball BGA package; supplier device package specified as 60-TWBGA (8×10.5) and package case listed as 60-TFBGA.
- Operating Range Specified operating temperature range of 0°C to 85°C (TC).
- Mounting and Format Volatile memory in DRAM format for board-level mounting and integration.
Unique Advantages
- DDR2 performance at 400 MHz: Provides DDR2-class clocking suitable for systems that require 400 MHz operation.
- Compact BGA footprint: 60-ball TWBGA/TFBGA packaging (8×10.5) reduces board area for dense system designs.
- Low-voltage operation: 1.7 V–1.9 V supply supports lower-power DDR2 implementations.
- Standard SSTL_18 interface: Facilitates integration with SSTL_18-compatible memory controllers and designs.
- Defined timing parameters: Documented access time (400 ps) and write cycle time (15 ns) support predictable memory timing and system timing analysis.
Why Choose IC DRAM 512MBIT PAR 60TWBGA?
The IS43DR86400E-25DBL-TR positions itself as a straightforward 512 Mbit DDR2 SDRAM option combining 64M × 8 organization, 400 MHz operation, and SSTL_18 signaling in a 60-ball BGA package. Its defined timing parameters and low-voltage supply range make it suitable for designs that require predictable DDR2 memory behavior within a 0°C to 85°C operating window.
Manufactured by Integrated Silicon Solution Inc., this device is appropriate for engineers specifying DDR2 memory with compact packaging and SSTL_18 interface requirements, offering clear electrical and physical specifications to support system design and validation.
Request a quote or contact sales to inquire about availability, lead times, and pricing for the IS43DR86400E-25DBL-TR.
