IS43R16160F-5BL-TR

IC DRAM 256MBIT PAR 60TFBGA
Part Description

IC DRAM 256MBIT PAR 60TFBGA

Quantity 1,609 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43R16160F-5BL-TR – 256 Mbit Parallel DDR SDRAM, 60‑TFBGA

The IS43R16160F-5BL-TR is a 256 Mbit volatile DRAM device implemented as SDRAM - DDR with a parallel memory interface. It is organized as 16M x 16 and supplied in a 60‑TFBGA (8×13) package.

Designed for systems that require external DDR DRAM density and standard operating ranges, the device provides specified timing, voltage, and thermal operating conditions for integration into embedded and board‑level memory subsystems.

Key Features

  • Memory Core 256 Mbit DRAM organized as 16M × 16 words, implemented as SDRAM - DDR with a parallel interface.
  • Performance Rated clock frequency of 200 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns for predictable memory timing.
  • Power Operating supply voltage range from 2.3 V to 2.7 V to match system power rails within that window.
  • Package Supplied in a 60‑TFBGA (8×13) package suitable for board‑level mounting and compact footprints.
  • Operating Conditions Specified ambient operating temperature range of 0 °C to 70 °C (TA) for standard commercial environments.
  • Interface & Format Parallel memory interface in a DRAM format, suitable for designs requiring externally addressed volatile memory.

Typical Applications

  • Embedded Memory Expansion — Used as external 256 Mbit parallel DDR SDRAM where additional volatile memory capacity is required.
  • Board‑Level DRAM Subsystems — Integrated on PCBs to provide organized 16M × 16 memory blocks for system memory buffering and storage of transient data.
  • Commercial Electronics — Deployed in designs operating within 0 °C to 70 °C that require a 2.3 V–2.7 V DDR memory solution in a compact BGA package.

Unique Advantages

  • Defined Memory Density: 256 Mbit capacity provides clear sizing for system memory planning and addressing.
  • Predictable Timing: 200 MHz clock rating, 700 ps access time, and 15 ns write cycle time support deterministic memory timing analyses.
  • Compact BGA Package: 60‑TFBGA (8×13) reduces board area compared with larger DIP or SOIC packages while enabling surface‑mount assembly.
  • Standard Voltage Window: 2.3 V–2.7 V supply range aligns with common system rails for straightforward power design.
  • Commercial Temperature Range: Specified 0 °C to 70 °C operation for products targeting standard commercial environments.

Why Choose IC DRAM 256MBIT PAR 60TFBGA?

The IS43R16160F-5BL-TR positions itself as a straightforward, specification‑driven DDR SDRAM option when a 256 Mbit, 16M × 16 parallel memory is required. Its defined timing (200 MHz clock, 700 ps access), supply range, and compact 60‑TFBGA footprint make it suitable for designs where clear electrical and thermal boundaries are necessary.

This device is appropriate for customers and designs that require a documented performance and operating profile for integration into embedded systems or board‑level memory subsystems. Its standard specifications support long‑term design planning and predictable system behavior within the stated operating conditions.

Request a quote or contact sales to inquire about availability, lead times, and pricing for the IS43R16160F-5BL-TR.

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