IS43R16160F-5BLI-TR
| Part Description |
IC DRAM 256MBIT PAR 60TFBGA |
|---|---|
| Quantity | 686 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 60-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 16M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43R16160F-5BLI-TR – IC DRAM 256MBIT PAR 60TFBGA
The IS43R16160F-5BLI-TR is a 256 Mbit volatile DRAM device implemented as a parallel DDR SDRAM with a 16M × 16 memory organization. Designed and manufactured by Integrated Silicon Solution Inc (ISSI), it provides a compact 60-TFBGA (8×13) package for system memory applications.
This device targets designs that require a parallel DDR memory interface operating up to a 200 MHz clock, offering a defined operating range and package options for space-constrained boards.
Key Features
- Memory Core 256 Mbit DRAM organized as 16M × 16, delivered as volatile memory suitable for system memory expansion.
- Technology & Interface SDRAM – DDR technology with a parallel memory interface and a specified clock frequency of 200 MHz.
- Performance Specified access time of 700 ps and a write cycle time (word/page) of 15 ns for predictable timing behavior.
- Power Operating supply voltage range from 2.3 V to 2.7 V to support low-voltage DDR system designs.
- Package 60-TFBGA package (8 × 13) providing a compact ball-grid footprint for high-density board layouts.
- Operating Temperature Rated for ambient temperatures from −40°C to 85°C (TA), enabling use across industrial temperature ranges.
Typical Applications
- Embedded Memory Expansion — Parallel DDR SDRAM capacity for embedded systems requiring 256 Mbit of volatile storage.
- Consumer Electronics — System memory for devices where a compact 60-TFBGA footprint and DDR interface are required.
- Industrial Control — Memory for industrial controllers and equipment operating within a −40°C to 85°C ambient range.
Unique Advantages
- Compact BGA Footprint: 60-TFBGA (8×13) package reduces PCB area for space-constrained designs.
- DDR Parallel Interface: Supports a parallel DDR memory topology at up to 200 MHz clock frequency for straightforward memory integration.
- Predictable Timing: Defined access time (700 ps) and write cycle time (15 ns) help simplify timing analysis and system validation.
- Low-Voltage Operation: 2.3 V–2.7 V supply range enables compatibility with low-voltage DDR system power rails.
- Wide Temperature Range: −40°C to 85°C rating supports use in varied operating environments.
Why Choose IS43R16160F-5BLI-TR?
The IS43R16160F-5BLI-TR provides a straightforward, specification-driven solution for designs that need a 256 Mbit parallel DDR SDRAM in a compact 60-TFBGA package. Its defined electrical and timing parameters—clock frequency, access time, write cycle time, and supply voltage range—make it suitable for applications where predictable memory performance and a small board footprint matter.
Manufactured by Integrated Silicon Solution Inc, this DRAM device is aimed at engineers building embedded, consumer, or industrial systems that require a clear, verifiable set of memory characteristics and a wide operating temperature window.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS43R16160F-5BLI-TR.
