IS43R16160F-5TL

The IS43R16160F-5TL is a 256 Mbit volatile DRAM organized as 16M × 16 and implemented as DDR SDRAM with a parallel memory interface. It delivers system memory in a compact 66‑TSOP II package and operates from a 2.3 V to 2.7 V supply.

This device is suitable for designs that require a parallel DDR memory element with a 200 MHz clock capability, 700 ps access time, and a specified operating temperature range of 0°C to 70°C.

Key Features

• Memory Architecture  256 Mbit DRAM organized as 16M × 16 with a parallel DDR SDRAM architecture for word-wide data paths.
• Performance  Supports a clock frequency of 200 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Power  Operates from a 2.3 V to 2.7 V supply range, providing defined operating voltages for system integration.
• Package  Supplied in a 66‑TSSOP / 66‑TSOP II package (0.400" / 10.16 mm width) suitable for board-level mounting where a compact surface-mount memory package is required.
• Environmental / Operating Range  Rated for an ambient operating temperature range of 0°C to 70°C (TA).
• Memory Interface  Parallel memory interface suitable for systems designed to use parallel DDR SDRAM devices.

Typical Applications

• System Memory  Acts as volatile parallel DDR SDRAM for designs requiring 256 Mbit of working memory in a compact package.
• Board-Level Memory Expansion  Used on PCBs to add parallel DRAM capacity where a 66‑TSOP II footprint is preferred.
• Embedded Systems  Integrates into embedded devices that need a defined operating temperature range (0°C to 70°C) and a 2.3 V–2.7 V supply.

Unique Advantages

• Compact 66‑TSOP II package: Provides a narrow (10.16 mm) surface-mount footprint for space-constrained board designs.
• Parallel DDR architecture: 16M × 16 organization and parallel interface support straightforward word-wide memory implementations.
• Defined performance parameters: 200 MHz clock frequency, 700 ps access time, and 15 ns write cycle time give clear timing characteristics for system design.
• Low-voltage operation: 2.3 V to 2.7 V supply range enables integration with systems targeting reduced core voltages.
• Commercial temperature rating: 0°C to 70°C ambient rating aligns with standard commercial applications and system environments.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The IS43R16160F-5TL provides a defined, compact DDR SDRAM option for designs that require 256 Mbit of volatile parallel memory with clear electrical and timing specifications. Its 16M × 16 organization, 200 MHz clock capability, and 66‑TSOP II package make it straightforward to integrate into board-level memory implementations.

This device is well suited to engineers and procurement teams specifying parallel DRAM components for commercial-temperature systems that operate within a 2.3 V–2.7 V supply window and require explicit access time and cycle-time characteristics for timing budgets.

Request a quote or submit an inquiry to obtain pricing, availability, and sample information for the IS43R16160F-5TL.