IS43R16160F-5TLI-TR

The IS43R16160F-5TLI-TR is a 256 Mbit volatile DRAM organized as 16M × 16 implemented as DDR SDRAM with a parallel memory interface. It delivers 200 MHz clock operation with a 16M × 16 organization and an access time of 700 ps, packaged in a 66‑TSSOP (0.400", 10.16 mm width) form factor.

This device is intended for designs that require a compact, low‑voltage parallel DDR memory element with specified timing characteristics and a commercial temperature range of -40 °C to 85 °C.

Key Features

• Memory Core 256 Mbit DRAM organized as 16M × 16 provides parallel word/panel memory organization for bused memory architectures.
• Technology & Interface DDR SDRAM technology with a parallel memory interface supporting synchronous double‑data‑rate operation at a 200 MHz clock frequency.
• Performance 200 MHz clock frequency and an access time of 700 ps, with a write cycle time (word page) of 15 ns for predictable timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range, enabling low‑voltage system integration.
• Package 66‑TSSOP (66‑TSOP II) package, 0.400" (10.16 mm) width, suitable for board designs requiring a narrow TSOP footprint.
• Temperature Range Specified operating ambient temperature range of -40 °C to 85 °C.

Typical Applications

• Embedded Systems — Provides a compact parallel DDR memory option for embedded designs that require a 256 Mbit DRAM die in a 66‑TSSOP package.
• Memory Expansion Boards — Suitable for modules or boards that incorporate discrete parallel DDR SDRAM banks with 16M × 16 organization.
• Industrial Equipment — Usable in systems operating across a -40 °C to 85 °C ambient range where a low‑voltage DDR memory component is required.
• Legacy Parallel DDR Designs — Fits designs that use parallel DDR SDRAM interfaces and require specified timing such as 200 MHz clocking and 15 ns word page write cycles.

Unique Advantages

• Compact TSOP II Package: 66‑TSSOP (0.400", 10.16 mm) package reduces board footprint while providing a standard TSOP form factor for parallel memory.
• Low‑Voltage Operation: 2.3 V to 2.7 V supply range supports lower power system designs and simpler power‑rail integration.
• Deterministic Timing: 200 MHz clock frequency with 700 ps access time and 15 ns word‑page write cycle enables predictable timing for memory subsystem design.
• Parallel DDR Architecture: 16M × 16 organization and parallel interface provide straightforward integration into bused memory architectures.
• Wide Operating Temperature: -40 °C to 85 °C ambient rating supports deployment in temperature‑variant environments.

Why Choose IS43R16160F-5TLI-TR?

The IS43R16160F-5TLI-TR positions itself as a compact, low‑voltage DDR SDRAM component delivering defined timing and a 16M × 16 organization for parallel memory subsystems. Its 66‑TSSOP package and -40 °C to 85 °C operating range make it suitable for designs that need a discrete 256 Mbit DRAM with predictable electrical and timing characteristics.

This device is appropriate for engineers and procurement teams specifying parallel DDR memory in space‑constrained board layouts who require clear supply voltage, timing, and thermal specifications for system integration and validation.

Request a quote or contact sales to discuss availability, lead times, and pricing for the IS43R16160F-5TLI-TR.