IS43R16160F-5TL-TR

The IS43R16160F-5TL-TR is a 256 Mbit volatile DDR SDRAM device organized as 16M × 16 with a parallel memory interface in a 66-TSSOP / 66-TSOP II package. It provides board-level parallel DRAM capacity and timing characteristics for systems that require defined DDR memory behavior in a compact package.

Key electrical and timing parameters include a 200 MHz clock frequency, 700 ps access time, 15 ns write cycle time (word page), and a supply voltage range of 2.3 V to 2.7 V, with an operating ambient temperature range of 0°C to 70°C.

Key Features

• Core / Memory 256 Mbit DRAM organized as 16M × 16 supporting parallel DDR operation.
• Performance 200 MHz clock frequency with a 700 ps access time and 15 ns write cycle time (word page) for predictable timing behavior.
• Power Supply voltage range of 2.3 V to 2.7 V for low-voltage DDR operation.
• Interface & Format Parallel memory interface in DRAM format for direct board-level implementation.
• Package 66-TSSOP / 66-TSOP II (0.400", 10.16 mm width) supplier device package suitable for compact board placement.
• Operating Temperature Commercial ambient temperature range: 0°C to 70°C (TA).

Typical Applications

• Embedded Systems Provides 256 Mbit parallel DDR SDRAM in a compact 66-TSOP II package for board-level system memory and buffering.
• Memory Expansion Modules Suited for modules that require a 16M × 16 memory organization and defined DDR timing parameters.
• Board-Level Buffering Used where a parallel DRAM interface and clear access/write timing (700 ps access, 15 ns write cycle) are required for data staging.

Unique Advantages

• Compact TSOP footprint: 66-TSSOP / 66-TSOP II package (0.400", 10.16 mm) enables high-density board integration.
• 16-bit parallel organization: 16M × 16 data structure provides a 16-bit data path for parallel memory architectures.
• Low-voltage operation: 2.3 V–2.7 V supply range reduces power draw compared to higher-voltage alternatives.
• Defined timing parameters: 700 ps access time and 15 ns write cycle time (word page) simplify timing analysis and system design.
• High-frequency DDR capability: 200 MHz clock frequency supports applications requiring higher-speed DDR memory access.
• Commercial temperature support: 0°C–70°C (TA) provides predictable performance across standard commercial environments.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The IS43R16160F-5TL-TR offers a compact, board-friendly DDR SDRAM solution with a 256 Mbit capacity and 16M × 16 organization, delivering clearly specified timing and electrical characteristics for integration into parallel-memory designs. Its combination of 200 MHz clock capability, low-voltage operation (2.3 V–2.7 V), and a 66-TSOP II package make it suitable for designs that require predictable DDR performance in a small footprint.

This device is appropriate for engineers and procurement teams specifying board-level DRAM where defined access times, write cycle timing, and package dimensions are essential for system-level integration and stable operation within commercial temperature ranges.

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