IS43R16160F-6BLI-TR

IC DRAM 256MBIT PAR 60TFBGA
Part Description

IC DRAM 256MBIT PAR 60TFBGA

Quantity 359 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency166 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43R16160F-6BLI-TR – 256 Mbit DDR SDRAM, Parallel, 60-TFBGA

The IS43R16160F-6BLI-TR is a 256 Mbit volatile memory device implemented as DDR SDRAM with a parallel memory interface, supplied by Integrated Silicon Solution Inc (ISSI). It provides a 16M × 16 memory organization in a compact 60-TFBGA (8x13) package.

Designed for systems that require mid-density DDR SDRAM in a small BGA footprint, the device targets applications needing defined clocking and timing characteristics, low-voltage operation, and extended temperature range operation.

Key Features

  • Memory Type & Technology Volatile DRAM implemented as DDR SDRAM providing a parallel memory interface for synchronous data transfers.
  • Density & Organization 256 Mbit total capacity arranged as 16M × 16 for straightforward bus mapping and memory addressing.
  • Performance Supports a clock frequency of 166 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns, enabling predictable timing for system design.
  • Voltage Operates from a 2.3 V to 2.7 V supply range, suitable for low-voltage system domains.
  • Package & Mounting Supplied in a 60-TFBGA package (8x13) for surface-mount PCB assembly and compact board-level integration.
  • Operating Temperature Rated for operation from −40 °C to 85 °C (TA), supporting a wide range of environmental conditions.

Typical Applications

  • Embedded memory for system controllers — Use where a 256 Mbit DDR SDRAM is required in a compact package for board-level memory expansion.
  • Consumer and industrial devices — Suitable for designs that need mid-density parallel DDR SDRAM with defined timing and low-voltage operation.
  • Compact module integration — Fits applications requiring a small BGA footprint (60-TFBGA, 8x13) for space-constrained PCBs.

Unique Advantages

  • Balanced density and organization: 256 Mbit arranged as 16M × 16 simplifies address mapping while providing mid-level capacity.
  • Defined timing profile: 166 MHz clock frequency with 700 ps access time and 15 ns write cycle time supports precise system timing requirements.
  • Low-voltage operation: 2.3 V to 2.7 V supply reduces power domain complexity in low-voltage designs.
  • Compact BGA package: 60-TFBGA (8x13) enables high-density PCB layouts and surface-mount assembly.
  • Extended temperature range: −40 °C to 85 °C rating supports operation across varied environmental conditions.

Why Choose IC DRAM 256MBIT PAR 60TFBGA?

The IS43R16160F-6BLI-TR combines 256 Mbit DDR SDRAM capacity with a 16M × 16 organization, predictable timing characteristics, and low-voltage operation to address mid-density memory needs in compact designs. Its 60-TFBGA (8x13) package and −40 °C to 85 °C operating range make it appropriate for applications that require space-efficient board integration and reliable performance across temperature variations.

Manufactured by Integrated Silicon Solution Inc (ISSI), this device is suitable for designers and procurement teams specifying a parallel DDR SDRAM solution where defined clocking, compact packaging, and low-voltage operation are primary requirements.

If you would like pricing, availability, or a formal quote for the IS43R16160F-6BLI-TR, please request a quote or contact sales to discuss your requirements and lead times.

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