IS43R16160F-6TL-TR

The IS43R16160F-6TL-TR is a 256 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It is organized as 16M × 16 and is offered in a 66-TSOP II (66-TSSOP, 0.400" / 10.16 mm width) package.

Designed for board-level memory integration, the device operates from a 2.3 V to 2.7 V supply, supports a 166 MHz clock frequency, and is specified for an ambient temperature range of 0°C to 70°C (TA), making it suitable for systems that require compact, parallel DDR memory with defined timing characteristics.

Key Features

• Memory Type & Technology Volatile DRAM implemented as DDR SDRAM with a parallel memory interface and a total density of 256 Mbit.
• Memory Organization Organized 16M × 16 bits to provide a parallel data path appropriate for board-level memory architectures.
• Performance Supports a clock frequency of 166 MHz, an access time of 700 ps, and a write cycle time (word/page) of 15 ns for deterministic timing.
• Power Nominal supply voltage range of 2.3 V to 2.7 V.
• Interface Parallel memory interface for integration into systems requiring parallel DRAM connectivity.
• Package Supplied in a 66-TSOP II package (66-TSSOP, 0.400" / 10.16 mm width) suitable for PCB mounting.
• Operating Temperature Specified ambient operating range: 0°C to 70°C (TA).

Typical Applications

• Embedded Memory Systems Provides 256 Mbit of parallel DDR SDRAM for embedded controllers and boards that require a 16M × 16 memory organization.
• Board-Level DRAM Expansion 66-TSOP II package allows compact PCB integration for designs needing additional parallel DRAM capacity.
• Consumer and Industrial Electronics Suitable for systems operating within 0°C to 70°C that require defined timing (166 MHz clock, 700 ps access) and a 2.3 V–2.7 V supply.

Unique Advantages

• Parallel DDR Architecture: Enables straightforward integration into parallel DRAM memory buses using a 16-bit data organization.
• Defined Timing Performance: 166 MHz clock rate with 700 ps access time and 15 ns write cycle time provides predictable memory timing for system designers.
• Compact Package: Available in a 66-TSOP II (66-TSSOP) package (0.400" / 10.16 mm width) for space-constrained PCB layouts.
• Low-Voltage Operation: Operates from 2.3 V to 2.7 V, enabling compatibility with designs that target that supply window.
• Clear Temperature Specification: Rated for 0°C to 70°C ambient operation for deployment in temperature-controlled environments.

Why Choose IS43R16160F-6TL-TR?

The IS43R16160F-6TL-TR positions a compact, parallel DDR SDRAM option for designs that require 256 Mbit density with a 16M × 16 organization and defined timing characteristics. Its combination of a 66-TSOP II package, 2.3 V–2.7 V supply range, and specified 0°C to 70°C operating window makes it suited to board-level memory implementations where footprint, timing, and supply compatibility are primary considerations.

This device is appropriate for engineers specifying deterministic memory timing and space-efficient packaging in embedded, consumer, or industrial electronics designs that match the provided electrical and thermal specifications.

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