IS43R16160F-6TLI-TR

The IS43R16160F-6TLI-TR is a 256 Mbit volatile DRAM organized as 16M × 16, implemented as DDR SDRAM with a parallel memory interface. It provides performance-oriented timing with a 166 MHz clock frequency and a 700 ps access time for systems requiring fast, temporary data storage.

Manufactured by Integrated Silicon Solution, Inc. (ISSI) and supplied in a compact 66‑TSOP II (66‑TSSOP, 0.400", 10.16 mm width) package, the device supports an operating ambient temperature range of −40°C to 85°C and a supply voltage range of 2.3 V to 2.7 V.

Key Features

• Memory Architecture  256 Mbit DRAM organized as 16M × 16, providing a parallel data path for system memory buffering and temporary storage.
• Technology  DDR SDRAM architecture designed for double-data-rate operation with a parallel memory interface.
• Performance  166 MHz clock frequency and 700 ps access time deliver deterministic timing; write cycle time (word/page) specified at 15 ns.
• Power  Low-voltage operation across a supply range of 2.3 V to 2.7 V to meet system-level power constraints.
• Package  Supplied in a 66‑TSOP II / 66‑TSSOP package (0.400", 10.16 mm width) for compact PCB integration.
• Operating Temperature  Specified ambient operating range from −40°C to 85°C (TA) for deployment across a broad thermal envelope.

Typical Applications

• Parallel memory subsystems  Use as on-board volatile storage where a parallel DDR interface and 16-bit data organization are required.
• Embedded systems  Temporary data buffering and working memory in embedded platforms that operate within the listed voltage and temperature ranges.
• Industrial electronics  Applications requiring a compact 66‑TSOP II package and operation across −40°C to 85°C ambient temperatures.

Unique Advantages

• Deterministic timing  700 ps access time and 15 ns write cycle time provide clear timing parameters for system design and memory scheduling.
• Compact board footprint  66‑TSOP II (66‑TSSOP) package enables high-density PCB layouts while maintaining a standardized package outline.
• Wide ambient temperature range  −40°C to 85°C specified operating range supports deployment in thermally challenging environments.
• Low-voltage operation  2.3 V to 2.7 V supply range helps align with modern low-voltage system rails.
• Clear organization  16M × 16 memory organization simplifies bus planning and integration with parallel interfaces.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The IS43R16160F-6TLI-TR is positioned for designs that require a compact, parallel DDR DRAM solution with defined timing and operating parameters. Its combination of 256 Mbit capacity, 16M × 16 organization, 166 MHz clocking and specified access/write timings makes it suitable for systems that need predictable volatile storage performance within the supplied voltage and temperature ranges.

Engineers selecting this ISSI device benefit from a standardized 66‑TSOP II package and explicit electrical and timing specifications that facilitate integration into embedded and industrial designs where board space, supply voltage, and thermal range are key considerations.

Request a quote or contact sales to check availability and obtain pricing and lead-time information for the IS43R16160F-6TLI-TR.