IS43R16160F-5BL

IC DRAM 256MBIT PAR 60TFBGA
Part Description

IC DRAM 256MBIT PAR 60TFBGA

Quantity 81 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43R16160F-5BL – IC DRAM 256Mbit PAR 60TFBGA

The IS43R16160F-5BL is a 256 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It is organized as 16M × 16 and is supplied in a compact 60‑TFBGA (8×13) package.

Designed for systems that require on‑board parallel DDR memory, the device offers a 200 MHz clock specification, an access time of 700 ps, and operates from a 2.3 V to 2.7 V supply within an ambient temperature range of 0 °C to 70 °C.

Key Features

  • Memory Core / Technology DDR SDRAM architecture providing a parallel memory interface for synchronous data transfers.
  • Capacity & Organization 256 Mbit total capacity organized as 16M × 16, suitable for designs requiring wide‑word parallel access.
  • Performance & Timing Rated clock frequency of 200 MHz, with a specified access time of 700 ps and a write cycle time (word page) of 15 ns.
  • Power Operates from a supply voltage range of 2.3 V to 2.7 V.
  • Package 60‑TFBGA package (8×13 footprint) for space‑efficient PCB integration.
  • Operating Conditions Ambient operating temperature range of 0 °C to 70 °C (TA).

Typical Applications

  • Embedded Systems — Provides parallel DDR memory for microcontroller- or processor‑based designs that require 16‑bit wide DRAM storage.
  • Consumer Electronics — Suitable for compact product designs needing on‑board volatile storage in a 60‑TFBGA footprint.
  • Networking & Communications — Can be used where a parallel DDR memory interface and the specified timing (200 MHz clock, 700 ps access) match system requirements.

Unique Advantages

  • Parallel DDR interface at 200 MHz: Enables synchronous parallel data transfers aligned with system clocking requirements.
  • 16M × 16 organization: Delivers a 16‑bit wide data path for designs that require wide‑word access without additional external bus combining.
  • Compact 60‑TFBGA package: Reduces PCB area while providing the required pinout for parallel memory integration.
  • Tight timing specifications: 700 ps access time and 15 ns write cycle time give clear, verifiable timing for system timing budgets.
  • <strong:Narrow supply range: 2.3 V to 2.7 V supply requirement simplifies power rail planning for low‑voltage systems.

Why Choose IS43R16160F-5BL?

The IS43R16160F-5BL positions itself as a straightforward, verifiable DDR SDRAM option for designs requiring a 256 Mbit parallel memory organized as 16M × 16. With a 200 MHz clock rating, defined access and write cycle timings, and a compact 60‑TFBGA package, it is aimed at engineers specifying on‑board volatile memory within the provided supply and temperature ranges.

This device is appropriate for product designs where the stated electrical characteristics (2.3 V–2.7 V supply), timing parameters, and package footprint match system requirements, offering predictable behavior and ease of integration into existing parallel memory interfaces.

Request a quote or contact sales to discuss availability, pricing, and lead times for the IS43R16160F-5BL.

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