IS43R16160F-5BLI

IC DRAM 256MBIT PAR 60TFBGA
Part Description

IC DRAM 256MBIT PAR 60TFBGA

Quantity 169 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package60-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS43R16160F-5BLI - 256Mbit DDR SDRAM in Compact TFBGA Package

The IS43R16160F-5BLI is a 256Mbit DDR SDRAM (Synchronous Dynamic Random Access Memory) from ISSI, Integrated Silicon Solution Inc. Organized as 16M x 16, this parallel memory device operates at a 200MHz clock frequency and supports an access time of 0.7ns. Designed for applications requiring fast data throughput and reliable volatile memory storage, this DRAM is ideal for embedded systems, networking equipment, and industrial applications where space constraints demand a compact footprint.

With an operating temperature range of -40°C to 85°C and a low-voltage supply of 2.3V to 2.7V, the IS43R16160F-5BLI delivers performance and power efficiency in a 60-pin TFBGA package measuring just 8mm x 13mm.

Key Features

  • DDR SDRAM Technology - Leverages Double Data Rate architecture to transfer data on both rising and falling clock edges, effectively doubling bandwidth compared to standard SDRAM for improved system performance.
  • 256Mbit Memory Capacity - Organized as 16M x 16, providing ample volatile storage for buffering, caching, and temporary data processing in embedded applications.
  • High-Speed Operation - Operates at 200MHz clock frequency with 0.7ns access time and 15ns write cycle time, ensuring rapid read/write operations for time-sensitive applications.
  • Extended Industrial Temperature Range - Rated for -40°C to 85°C operation, making it suitable for harsh industrial environments and automotive applications requiring reliable memory performance across temperature extremes.
  • Low Operating Voltage - Operates on 2.3V to 2.7V supply, reducing power consumption and heat generation while enabling compatibility with modern low-voltage digital systems.
  • Compact TFBGA Package - 60-pin Thin Fine-pitch Ball Grid Array (8mm x 13mm) minimizes PCB footprint, enabling high-density board designs and space-constrained applications.

Typical Applications

  • Industrial Automation - Provides high-speed volatile memory for programmable logic controllers (PLCs), human-machine interfaces (HMIs), and motion control systems where extended temperature tolerance ensures consistent operation in factory floor environments.
  • Networking and Telecommunications - Serves as buffer memory in routers, switches, and network interface cards where fast DDR throughput supports packet processing and data routing with minimal latency.
  • Medical Devices - Offers reliable temporary data storage for portable diagnostic equipment and patient monitoring systems where the compact TFBGA package fits space-limited enclosures and low voltage operation extends battery life.
  • Automotive Infotainment - Functions as working memory in dashboard displays, navigation systems, and rear-seat entertainment modules where industrial temperature ratings accommodate in-cabin thermal variations.
  • Embedded Computing - Supports system memory needs in single-board computers, industrial PCs, and edge computing devices where parallel DDR interface integrates with common microprocessor and FPGA architectures.

Unique Advantages

  • Proven DDR Architecture: Standard DDR SDRAM interface ensures broad compatibility with existing processor platforms and development tools, reducing design risk and accelerating time-to-market.
  • Industrial Temperature Qualification: Wide -40°C to 85°C operating range eliminates the need for additional thermal management in many industrial and automotive applications, simplifying system design.
  • Space-Efficient Form Factor: The 60-TFBGA package delivers high memory density in an 8mm x 13mm footprint, enabling compact product designs without compromising performance.
  • Power-Optimized Operation: Low 2.3V to 2.7V supply voltage reduces overall system power consumption, lowering thermal dissipation requirements and extending battery runtime in portable devices.
  • Active Product Status: Current production availability from ISSI ensures long-term supply continuity for designs requiring stable component sourcing throughout product lifecycles.
  • Fast Access Performance: Sub-nanosecond access time and 200MHz operation support demanding real-time applications requiring immediate data availability and high throughput.

Why Choose IS43R16160F-5BLI?

The IS43R16160F-5BLI combines proven DDR SDRAM technology with industrial-grade temperature performance and a compact package, making it an excellent choice for embedded system designers facing space and environmental constraints. Its parallel interface integrates seamlessly with standard microprocessor and FPGA architectures, while the wide operating temperature range supports deployment in industrial, automotive, and outdoor applications without requiring special thermal accommodations.

For applications requiring reliable volatile memory with fast access times and a small PCB footprint, the IS43R16160F-5BLI offers a balanced solution backed by ISSI's active production status and industry-standard DDR interface.

Contact Us for Pricing and Availability

Ready to integrate the IS43R16160F-5BLI into your next design? Contact our sales team to request a quote, discuss volume pricing, or obtain samples for evaluation. Our technical support staff can assist with integration questions and provide additional documentation to accelerate your development process.

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