 | | IS42S32400F-7B | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 101 | |
 | | IS42S32400F-7BI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 620 | |
 | | IS42S32400F-7BI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 362 | |
 | | IS42S32400F-7BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 961 | |
 | | IS42S32400F-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 970 | |
 | | IS42S32400F-7BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 867 | |
 | | IS42S32400F-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,637 | |
 | | IS42S32400F-7TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,665 | |
 | | IS42S32400F-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 63 | |
 | | IS42S32400F-7TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 156 | |
 | | IS42S32400F-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 73 | |
| N/A | | IS42S32400J-6BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,551 | |
| N/A | | IS42S32400J-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,873 | |
 | | IS42S32400J-6BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 676 | |
| N/A | | IS42S32400J-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 1,345 | |
| N/A | | IS42S32400J-6TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,378 | |
| N/A | | IS42S32400J-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,938 | |
 | | IS42S32400J-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 514 | |
| N/A | | IS42S32400J-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 50 | |
| N/A | | IS42S32400J-7BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 330 | |