| N/A | | IS42S32400J-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 321 | |
 | | IS42S32400J-7BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 702 | |
| N/A | | IS42S32400J-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 983 | |
 | | IS42S32400J-7TL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 633 | |
| N/A | | IS42S32400J-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 172 | |
 | | IS42S32400J-7TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 81 | |
| N/A | | IS42S32400J-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,209 | |
 | | IS42S32800B-6B | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 482 | |
 | | IS42S32800B-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 310 | |
 | | IS42S32800B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,217 | |
 | | IS42S32800B-6BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 748 | |
 | | IS42S32800B-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 544 | |
 | | IS42S32800B-6T | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 8 | |
 | | IS42S32800B-6T-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 24 | |
 | | IS42S32800B-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,187 | |
 | | IS42S32800B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 580 | |
 | | IS42S32800B-6TLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,153 | |
 | | IS42S32800B-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,069 | |
 | | IS42S32800B-7BI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 698 | |
 | | IS42S32800B-7BI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 90LFBGA | DRAM Memory | 90-LFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: N/A | 1,359 | |