 | N/A | IS43R16800E-6TLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 467 | |
 | | IS43R32160D-5BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 663 | |
 | | IS43R32160D-5BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 32 Write Cycle Time Word Page: 15 ns | 978 | |
 | N/A | IS43R32400E-4BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 16 ns | 856 | |
 | N/A | IS43R32400E-4BL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.4V ~ 2.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 16 ns | 1,348 | |
 | N/A | IS43R32400E-5BL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 15 ns | 102 | |
 | N/A | IS43R32400E-5BLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 15 ns | 853 | |
 | N/A | IS43R32400E-5BLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 15 ns | 165 | |
 | | IS43R32800B-5BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144MINIBGA | Memory | 144-MiniBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 919 | |
 | | IS43R32800B-5BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144MINIBGA | Memory | 144-MiniBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 1,714 | |
 | | IS43R32800B-6BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144MINIBGA | Memory | 144-MiniBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 1,046 | |
 | | IS43R32800B-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144MINIBGA | Memory | 144-MiniBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 507 | |
 | | IS43R32800D-5BI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 1,287 | |
 | | IS43R32800D-5BL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 382 | |
 | | IS43R32800D-5BLI | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 144LFBGA | Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 1,188 | |
 | | IS43R83200B-5TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 733 | |
 | | IS43R83200B-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 682 | |
 | | IS43R83200B-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 143 | |
 | | IS43R83200B-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,220 | |
 | | IS43R83200D-5TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,701 | |