 | | IS43R83200D-6TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 84 | |
 | | IS43R83200D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 556 | |
 | | IS43R83200F-5TL | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,224 | |
 | | IS43R83200F-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 568 | |
 | | IS43R83200F-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,173 | |
 | | IS43R83200F-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 517 | |
 | | IS43R86400D-5TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 202 | |
 | | IS43R86400D-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 388 | |
 | | IS43R86400D-5TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 188 | |
 | | IS43R86400D-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 134 | |
 | | IS43R86400D-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 438 | |
 | | IS43R86400D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,395 | |
 | | IS43R86400D-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,136 | |
 | | IS43R86400D-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 967 | |
 | | IS43R86400E-5BI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 606 | |
 | N/A | IS43R86400E-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,327 | |
 | N/A | IS43R86400E-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 545 | |
 | N/A | IS43R86400E-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,063 | |
 | | IS43R86400F-5BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 341 | |
 | | IS43R86400F-5BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 255 | |