IS43R86400D-5TL

The IS43R86400D-5TL is a 512‑Mbit DDR SDRAM device organized as 64M × 8, implementing a double‑data‑rate architecture for two data transfers per clock cycle. It provides a parallel memory interface in a compact 66‑TSSOP (66‑TSOP II) package and is specified for commercial operation (0°C to +70°C).

Designed for systems that require high‑density, high‑speed parallel DDR memory, the device delivers programmable timing and burst options, differential clock inputs, and SSTL_2 compatible I/O to support synchronous memory subsystems.

Key Features

• Memory Core & Organization  The device is 512 Mbit total capacity, internally organized as 64M × 8 with four internal banks to allow concurrent operations.
• DDR Architecture & Data Strobe  Double‑data‑rate architecture performs two data transfers per clock; bidirectional data strobe (DQS) is transmitted/received with data and is edge‑aligned for READs and centre‑aligned for WRITEs.
• Differential Clock & DLL  Differential clock inputs (CK and CK̄) and an internal DLL align DQ and DQS transitions with clock transitions; commands are registered on the positive CK edge.
• Performance & Timing  Speed grade -5 supports Fck up to 200 MHz (CL=3); programmable CAS latency options of 2, 2.5 and 3; burst lengths of 2, 4 and 8; access time listed at 700 ps and write cycle time (word/page) of 15 ns.
• Power & I/O  VDD and VDDQ supply range specified 2.5 V to 2.7 V; I/O is SSTL_2 compatible and includes Data Mask (DM) for write masking at both edges of DQS.
• Refresh & Power Modes  Supports Auto Refresh and Self Refresh modes as well as Auto Precharge for memory management.
• Package & Temperature  Available in a 66‑TSSOP / 66‑TSOP II package (0.400" / 10.16 mm width) and specified for commercial ambient operation from 0°C to +70°C.

Unique Advantages

• High data throughput: Two transfers per clock combined with up to 200 MHz clocking (speed grade -5) enables elevated memory bandwidth within the device's DDR architecture.
• Flexible timing control: Programmable CAS latency (2 / 2.5 / 3) and selectable burst lengths (2, 4, 8) allow tuning for system timing and burst behavior.
• Robust I/O timing alignment: Differential clock inputs, DLL alignment of DQ/DQS, and defined DQS alignment modes improve signal capture and timing margins.
• Compact package footprint: 66‑TSOP II packaging (0.400", 10.16 mm width) supports board‑level density and integration in space‑constrained designs.
• Standard supply and interface compatibility: 2.5–2.7 V supply range with SSTL_2 compatible I/O simplifies integration with SSTL_2 memory interfaces.
• Built‑in refresh management: Auto Refresh and Self Refresh modes reduce external refresh control complexity for system designers.

Why Choose IS43R86400D-5TL?

The IS43R86400D-5TL positions itself as a practical 512‑Mbit DDR SDRAM option for designs that require standard DDR features—programmable CAS latency, selectable burst lengths, differential clocking and SSTL_2 compatible I/O—delivered in a compact 66‑TSOP II package. Its specified commercial temperature range and defined voltage and timing parameters make it suitable for board‑level memory subsystems that demand predictable, standards‑oriented DDR behavior.

Engineers seeking a parallel DDR SDRAM component with clear timing controls, refresh modes, and a compact footprint will find the IS43R86400D-5TL aligned to those integration needs while providing the common DDR capabilities required for system memory implementations.

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