IS43R83200F-5TL-TR
| Part Description |
IC DRAM 256MBIT PAR 66TSOP II |
|---|---|
| Quantity | 1,245 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43R83200F-5TL-TR – IC DRAM 256MBIT PAR 66TSOP II
The IS43R83200F-5TL-TR is a 256 Mbit parallel DRAM device implemented as DDR SDRAM with a 32M × 8 organization. It provides a 200 MHz clock interface, a 700 ps access time specification and supports a 2.3 V to 2.7 V supply range in a 66-TSOP II / 66-TSSOP package.
This device targets designs that require a compact external DRAM solution with defined timing characteristics and a parallel memory interface. Its package and electrical specifications make it suitable for systems that need discrete DRAM density with predictable timing and power envelope.
Key Features
- Memory Type Volatile DRAM implemented as SDRAM - DDR, organized as 32M × 8 for a total of 256 Mbit density.
- Performance 200 MHz clock frequency with 700 ps access time and a 15 ns write cycle time (word/page) for deterministic read/write timing.
- Voltage and Power Operates from 2.3 V to 2.7 V supply, enabling integration into systems using low-voltage DRAM power rails.
- Package Supplied in a 66-TSOP II / 66-TSSOP package (0.400", 10.16 mm width) for board-level space optimization and standard surface-mount assembly.
- Interface Parallel memory interface compatible with systems requiring discrete parallel DRAM devices.
- Operating Conditions Rated for operation over a 0 °C to 70 °C ambient temperature range (TA).
Typical Applications
- Embedded memory expansion — Provides 256 Mbit of parallel DRAM for systems that require external working memory with defined timing characteristics.
- Buffer and frame storage — Used where a parallel DDR DRAM is needed for temporary data buffering with specified access and cycle times.
- Legacy parallel-memory systems — Fits designs that rely on parallel DRAM interfaces and standard TSOP packages for board-level integration.
Unique Advantages
- 256 Mbit density in a compact TSOP package: Delivers significant memory capacity in a 66-TSOP II / 66-TSSOP footprint to help reduce board area.
- Defined timing characteristics: 700 ps access time and 15 ns write cycle time provide predictable performance for timing-sensitive designs.
- Low-voltage operation: 2.3 V–2.7 V supply range supports low-voltage system architectures and power budgeting.
- Standard parallel interface: Parallel memory interface simplifies integration into systems designed for discrete DRAM devices.
- Industry-standard package dimensions: 0.400" (10.16 mm) width 66-TSSOP package eases placement in existing PCB layouts and assembly flows.
Why Choose IC DRAM 256MBIT PAR 66TSOP II?
The IS43R83200F-5TL-TR positions as a straightforward 256 Mbit DDR SDRAM solution for designs that require a parallel DRAM device with defined timing, low-voltage operation, and a compact 66-TSOP II package. Its combination of 200 MHz clock capability, 700 ps access time, and a 32M × 8 organization provides a clear specification set for predictable system integration.
This device is well suited to engineers and procurement teams looking for a fixed-density DRAM component with established electrical and mechanical characteristics, enabling straightforward substitution into boards designed for 66-pin TSOP memory devices.
Request a quote or contact sales to discuss availability, lead times, and pricing for IS43R83200F-5TL-TR.