IS43R83200F-6TLI-TR
| Part Description |
IC DRAM 256MBIT PAR 66TSOP II |
|---|---|
| Quantity | 998 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43R83200F-6TLI-TR – IC DRAM 256MBIT PAR 66TSOP II
The IS43R83200F-6TLI-TR is a 256 Mbit volatile DRAM device organized as 32M × 8 using DDR SDRAM technology with a parallel memory interface. It delivers defined timing and electrical characteristics for systems that require a 256 Mbit parallel DDR memory component in a compact 66‑TSSOP / 66‑TSOP II package.
Key device attributes include a 166 MHz clock frequency, 700 ps access time, a 2.3 V to 2.7 V supply range, and an operating temperature range of -40 °C to 85 °C (TA), enabling consistent operation across a range of environmental conditions.
Key Features
- Memory Core 256 Mbit DRAM implemented as 32M × 8 organization for parallel memory configurations.
- Technology & Interface SDRAM – DDR technology with a parallel memory interface suitable for designs requiring DDR type timing and access.
- Performance 166 MHz clock frequency with 700 ps access time and a write cycle time (word/page) of 15 ns, providing defined timing characteristics for system memory operations.
- Power Operates from a 2.3 V to 2.7 V supply range, matching common DDR voltage domains.
- Package Supplied in a 66‑TSSOP (0.400", 10.16 mm width) / 66‑TSOP II package for compact board-level integration.
- Operating Temperature Rated for operation from -40 °C to 85 °C (TA), supporting a broad temperature window for industrial and commercial applications.
Unique Advantages
- Defined DDR timing: 166 MHz clock and 700 ps access time provide predictable performance for timing-sensitive memory interfaces.
- Compact footprint: 66‑TSSOP / 66‑TSOP II package enables higher board density while accommodating a 256 Mbit memory.
- Flexible supply range: 2.3 V to 2.7 V operation aligns with common DDR power domains for straightforward system integration.
- Wide operating temperature: -40 °C to 85 °C rating supports use in environments requiring extended temperature capability.
- Clear memory organization: 32M × 8 arrangement simplifies design decisions on bus width and addressing for parallel configurations.
Why Choose IS43R83200F-6TLI-TR?
The IS43R83200F-6TLI-TR provides a compact, specification-driven 256 Mbit DDR SDRAM solution with explicit timing and electrical parameters that help designers meet defined performance and integration targets. Its combination of 166 MHz clocking, defined access and cycle times, and a 2.3 V–2.7 V supply make it suitable for systems that require stable DDR memory behavior within a small package footprint.
This device is appropriate for projects that need a verified parallel DDR memory element with predictable timing and a broad operating temperature range, offering straightforward BOM integration and board-level placement options via the 66‑TSOP II package.
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