IS43R83200D-6TL-TR

The IS43R83200D-6TL-TR is a 256‑Mbit DDR SDRAM organized as 32M × 8 that implements a double‑data‑rate pipeline architecture with four internal banks. It provides high‑speed, bidirectional data transfers using a data strobe (DQS) and differential clock inputs to support synchronous read/write bursts.

Designed for commercial temperature applications, the device targets system memory and buffer functions where a compact 66‑TSSOP (66‑TSOP II) package, SSTL_2 compatible I/O, and programmable timing options are required.

Key Features

• Core Architecture  Double‑data‑rate (DDR) pipeline architecture supporting two data transfers per clock cycle and four internal banks for concurrent operations.
• Memory Organization  256 Mbit capacity with 32M × 8 organization (268,435,456‑bit array) and support for burst lengths of 2, 4 and 8 in sequential or interleave modes.
• Timing and Performance  Programmable CAS latencies (2, 2.5 and 3), maximum clock support up to 166–167 MHz for the -6 speed grade, 700 ps access time and 15 ns write cycle time (word page).
• Interface and Signalling  SSTL_2 compatible I/O, differential clock inputs (CK/CK̄), bidirectional DQS transmitted/received with data and DLL alignment of DQ/DQS to CK transitions.
• Power  VDD and VDDQ nominal 2.5 V (2.5 V ± 0.2 V) with operating supply range 2.3 V to 2.7 V.
• Refresh and Power Modes  Supports Auto Refresh and Self Refresh modes plus Auto Precharge and TRAS Lockout (tRAP = tRCD).
• Package and Temperature  Available in a 66‑pin TSOP‑II (66‑TSSOP, 0.400" / 10.16 mm width) package and specified for commercial operation (0°C to +70°C TA).
• Data Integrity Features  Data mask (DM) masks write data on both edges of the data strobe; DQS alignment options for read (edge‑aligned) and write (center‑aligned) operations.

Typical Applications

• Memory subsystem  Acts as DDR SDRAM storage for systems requiring 256‑Mbit parallel DRAM in a compact TSOP‑II package.
• Embedded system memory  Provides synchronous burst read/write capability with programmable CAS latency for embedded designs operating at commercial temperatures.
• Data buffering  Supports high‑throughput buffering with DDR transfers, DQS‑timing and four internal banks for pipelined access.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without higher clock rates.
• SSTL_2 compatible I/O: Industry signaling standard compatibility for systems expecting SSTL_2 voltage and interface behavior.
• Flexible timing: Programmable CAS latencies and selectable burst lengths allow designers to tune performance for specific timing and throughput needs.
• Compact package: 66‑TSSOP (TSOP‑II) package provides a small footprint option for space‑constrained PCBs.
• Low‑voltage operation: 2.3 V to 2.7 V supply range with nominal 2.5 V operation reduces power compared with higher voltage alternatives.

Why Choose IS43R83200D-6TL-TR?

The IS43R83200D-6TL-TR delivers a compact 256‑Mbit DDR SDRAM solution combining DDR pipeline architecture, programmable timing, and SSTL_2 compatible I/O in a 66‑TSSOP package. Its four internal banks, DQS timing features and support for Auto/Self Refresh modes make it suitable for designs that require burstable, synchronous memory with configurable latency and burst behavior.

This device is positioned for designers targeting commercial temperature systems that need a low‑voltage (approximately 2.5 V) DDR memory component in a TSOP‑II form factor, offering a balance of performance, package density, and timing flexibility.

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