IS43R83200B-6TL-TR

The IS43R83200B-6TL-TR is a 256 Mbit double data rate (DDR) synchronous DRAM organized as 32M × 8 with a parallel memory interface. It implements DDR architecture with bidirectional data strobe (DQS), differential clock inputs and an internal DLL to align data and strobe timing.

This device targets designs that require a 256 Mbit parallel DDR memory in a 66-pin TSOP II package, offering programmable CAS latency and burst length options, low-voltage operation, and standard refresh support for continuous operation.

Key Features

• Memory Core  256 Mbit DDR SDRAM organized as 32M × 8 with 4-bank operation (BA0, BA1).
• DDR Architecture  Double data rate transfers (two data transfers per clock cycle) with bidirectional DQS and differential CLK//CLK inputs; internal DLL aligns DQ/DQS to CLK.
• Performance  Specified clock frequency up to 166 MHz (product specification) with access time approximately 700 ps from clock and write cycle time (word page) of 15 ns.
• Timing Flexibility  Programmable CAS latency options (2, 2.5, 3) and selectable burst lengths (2, 4, 8) and burst types (sequential/interleave).
• Refresh and Power Management  8,192 refresh cycles per 64 ms, supporting Auto Refresh and Self Refresh modes; VDD/VDDQ nominal 2.5 V with operating range 2.3 V to 2.7 V.
• Interface Standard  SSTL_2 signaling interface for data and control lines.
• Package and Temperature  66-pin TSOP II (0.400", 10.16 mm width) package; commercial temperature range 0°C to +70°C.

Typical Applications

• Board-level memory expansion  Adds 256 Mbit of parallel DDR SDRAM capacity in designs requiring a 66-pin TSOP II footprint.
• High-speed buffering  Use where DDR transfers, bidirectional DQS and programmable CAS latency are needed for timing alignment and throughput.
• Systems using SSTL_2 signaling  Integrates into platforms designed for SSTL_2-compliant memory interfaces and low-voltage (2.3–2.7 V) operation.

Unique Advantages

• Programmable timing options: CAS latency (2 / 2.5 / 3) and burst length (2 / 4 / 8) let designers tune latency and burst behavior to system needs.
• DDR data integrity features: Differential clock inputs, bidirectional DQS and an internal DLL provide synchronized data transfers and strobe alignment.
• Standard low-voltage operation: VDD/VDDQ nominal 2.5 V with a 2.3–2.7 V supply range supports low-voltage system designs.
• Automatic refresh support: 8,192 refresh cycles per 64 ms plus Auto and Self Refresh modes reduce refresh management overhead.
• Compact, industry-standard package: 66-pin TSOP II (10.16 mm width) for board-level integration where this footprint is required.

Why Choose IC DRAM 256MBIT PAR 66TSOP II?

The IS43R83200B-6TL-TR combines DDR synchronous architecture, flexible timing options and SSTL_2 signaling in a 256 Mbit, 32M × 8 organization suitable for designs that require parallel DDR memory in a 66-pin TSOP II package. Its low-voltage operation, built-in DLL, and refresh capabilities make it appropriate for systems that need controlled timing and continuous memory availability within the specified commercial temperature range.

This device is well suited for engineers specifying board-level DDR memory where programmable latency, standard signaling, and a compact TSOP II form factor are key selection criteria. The documented timing and electrical parameters support predictable integration and validation in memory subsystems.

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