IS43R83200D-5TL

The IS43R83200D-5TL is a 256‑Mbit DDR SDRAM organized as 32M × 8 with a parallel memory interface in a 66‑TSSOP (66‑TSOP II) package. It implements a double‑data‑rate architecture with bidirectional data strobe (DQS), differential clock inputs and an internal DLL for high‑speed, edge‑aligned data transfers.

Designed for commercial‑temperature systems, this volatile DRAM device targets applications that require a compact, parallel DDR memory solution capable of burst transfers, programmable CAS latency and multi‑bank concurrent operation.

Key Features

• Memory Core & Capacity — 256 Mbit DDR SDRAM organized as 32M × 8 with four internal banks to support concurrent operations.
• Double‑Data‑Rate Architecture — Two data transfers per clock cycle with DQS transmitted/received for read/write capture; DQS is edge‑aligned for reads and center‑aligned for writes.
• Clocking and PHY — Differential clock inputs (CK and CK̅) and an on‑die DLL to align DQ/DQS transitions with clock edges; commands registered on positive clock edges.
• Performance — Rated for up to 200 MHz clock frequency (Fck Max at CL = 3) and an access time of 700 ps; write cycle time (word/page) specified at 15 ns.
• Programmability & Burst Control — Burst lengths of 2, 4 and 8 with sequential and interleave burst types; programmable CAS latencies of 2, 2.5 and 3.
• Signal/Interface Compatibility — SSTL_2 compatible I/O and data mask (DM) support to mask write data on both edges of DQS.
• Power — VDD and VDDQ supply range of 2.3 V to 2.7 V (2.5 V ±0.2 V specified).
• Package & Temperature — 66‑pin TSOP‑II (10.16 mm width) package; commercial operating temperature range 0°C to +70°C.
• Refresh & Self‑Management — Supports Auto Refresh and Self Refresh modes and Auto Precharge for simplified memory management.

Typical Applications

• Parallel DDR memory interfaces — For designs that require a 256‑Mbit, parallel DDR SDRAM with DQS and differential clocking.
• High‑speed buffer memory — Where burst transfers and up to 200 MHz clocking are needed for temporary data storage.
• Compact board‑level implementations — Low‑profile 66‑TSOP II package for space‑constrained PCBs.
• Commercial embedded systems — Systems operating within 0°C to +70°C that require volatile, high‑throughput DRAM.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle with DQS support enables higher effective data rates without increasing clock frequency.
• Programmable timing: Selectable burst lengths and CAS latencies (2, 2.5, 3) let designers tune latency and throughput for target systems.
• SSTL_2‑compatible I/O: Standardized I/O signaling simplifies interface design with SSTL_2 memory controllers.
• Compact package: 66‑TSSOP (TSOP‑II) footprint supports dense board layouts where board area is limited.
• Robust refresh options: Auto Refresh and Self Refresh modes reduce external management overhead for retained data integrity during idle periods.
• Commercial temperature rating: Specified 0°C to +70°C operation for mainstream electronic products and embedded equipment.

Why Choose IS43R83200D-5TL?

The IS43R83200D-5TL delivers a compact, parallel DDR SDRAM solution with programmable timing, burst control and SSTL_2 I/O compatibility—providing designers with a configurable memory block suited to commercial embedded systems and high‑throughput buffer applications. Its 32M × 8 organization, four internal banks and on‑die DLL support continuous burst operations and reliable data capture using DQS and differential clocking.

This device is appropriate for projects that need a 256‑Mbit volatile memory in a 66‑TSOP II footprint, operating at standard commercial temperatures and 2.5 V nominal supplies. It is aimed at engineers seeking predictable timing options, compact packaging and standard DDR signaling for board‑level memory implementations.

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