IS43R83200F-5TL

The IS43R83200F-5TL is a 256 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It is organized as 32M × 8 and is intended for designs requiring a compact, board-level parallel memory solution.

Key technical characteristics include a 200 MHz clock frequency, 700 ps access time, a write cycle time (word/page) of 15 ns, and an operating temperature range of 0°C to 70°C.

Key Features

• Memory Core 256 Mbit DRAM organized as 32M × 8, implemented as DDR SDRAM for parallel memory operations.
• Performance 200 MHz clock frequency with a 700 ps access time and a 15 ns write cycle time (word/page), supporting fast read/write cycles.
• Power Operates from a 2.3 V to 2.7 V supply range, enabling use in lower-voltage system domains.
• Interface Parallel memory interface suitable for systems that require parallel DRAM connectivity.
• Package Supplied in a 66-pin TSOP II / 66-TSSOP (0.400", 10.16 mm width) package for compact board-level integration.
• Environmental / Operating Range Specified for operation from 0°C to 70°C (TA), matching typical commercial-temperature system requirements.

Unique Advantages

• Parallel DDR architecture: Combines DDR SDRAM technology with a parallel interface to match legacy and board-level parallel memory designs while providing DDR timing characteristics.
• Measurable timing performance: 200 MHz clock and 700 ps access time give clear timing parameters for system timing budgets and memory controller configuration.
• Compact package footprint: 66-TSOP II / 66-TSSOP packaging reduces PCB area for dense memory implementations.
• Defined supply window: 2.3 V to 2.7 V operation allows designers to plan power rails precisely and optimize power domains.
• Commercial temperature rating: 0°C to 70°C operation is specified for typical commercial embedded applications.
• Standard memory organization: 32M × 8 layout simplifies address mapping and integration into existing parallel memory architectures.

Why Choose IS43R83200F-5TL?

The IS43R83200F-5TL is positioned for designs that require a straightforward, board-level 256 Mbit DDR DRAM in a compact 66-pin TSOP form factor. With explicit timing (700 ps access, 15 ns write cycle) and a 200 MHz clock specification, it provides concrete parameters for integration into parallel-memory systems.

This device suits engineers and procurement teams who need a well-specified, commercial-temperature volatile memory element with a defined supply range and small-package footprint for embedded or board-level memory expansion. Its clear electrical and mechanical specifications support predictable system design and validation.

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