IS43R83200F-6TL-TR
| Part Description |
IC DRAM 256MBIT PAR 66TSOP II |
|---|---|
| Quantity | 25 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of IS43R83200F-6TL-TR – IC DRAM 256MBIT PAR 66TSOP II
The IS43R83200F-6TL-TR is a 256 Mbit parallel DDR SDRAM device organized as 32M × 8. It provides volatile external memory in a compact 66‑TSSOP (66‑TSOP II) package for systems that require parallel DRAM storage.
With a specified clock frequency of 166 MHz, 700 ps access time and a 2.3 V–2.7 V supply range, the device targets designs needing mid‑rate DDR performance and low‑voltage operation within an ambient temperature range of 0°C–70°C.
Key Features
- Memory Core 256 Mbit DDR SDRAM organized as 32M × 8, providing byte-wide parallel memory storage.
- Performance Rated clock frequency of 166 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns for predictable timing.
- Interface Parallel memory interface suitable for systems with parallel DRAM controllers.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Package 66‑TSSOP (0.400", 10.16 mm width) — Supplier device package: 66‑TSOP II — for compact board integration.
- Operating Conditions Specified ambient operating temperature range of 0°C to 70°C (TA).
Typical Applications
- Embedded memory expansion — Provides external volatile storage where 256 Mbit DDR SDRAM is required for system memory extension.
- Buffering and temporary data storage — Suitable for systems that need parallel DRAM for intermediate data buffering with defined access timing.
- Board-level memory integration — Compact 66‑TSSOP package enables placement on space‑constrained PCBs needing parallel DDR memory.
Unique Advantages
- Compact 66‑TSOP II package: Enables high‑density board layouts while providing 256 Mbit storage in a small footprint.
- DDR SDRAM architecture: Delivers parallel DDR memory organization (32M × 8) for systems designed around parallel DRAM controllers.
- Defined timing performance: 166 MHz clock rating, 700 ps access time and 15 ns write cycle time provide measurable timing characteristics for system design.
- Low-voltage operation: 2.3 V–2.7 V supply range supports integration into lower‑voltage platforms.
- Commercial temperature range: 0°C–70°C ambient rating for typical commercial applications.
Why Choose IS43R83200F-6TL-TR?
IS43R83200F-6TL-TR positions itself as a straightforward, compact 256 Mbit parallel DDR SDRAM option for designs that require defined DDR timing, a 32M × 8 memory organization, and a small 66‑TSSOP package. Its specified clock frequency, access time and write cycle timing make it suitable for systems where predictable memory performance and low‑voltage operation are important.
This device is well suited to engineers and procurement teams specifying external volatile memory for embedded boards, buffering applications, and other designs that accept a commercial operating temperature range and require a 2.3 V–2.7 V supply.
If you need pricing, availability or a formal quote for IS43R83200F-6TL-TR, request a quote or submit an RFQ to obtain current commercial terms and lead‑time information.
