IS43R86400D-5TL-TR

The IS43R86400D-5TL-TR is a 512‑Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66‑pin TSOP‑II package. It implements a double‑data‑rate pipeline architecture with four internal banks, enabling two data transfers per clock cycle for sustained burst operations.

This device targets designs that require a compact, mid‑speed DDR memory element operating from 2.5 V to 2.7 V and within a commercial temperature range of 0 °C to 70 °C. Key value comes from programmable burst length and CAS latency, SSTL_2 compatible I/O, and standard DDR features such as auto/self refresh and DLL alignment.

Key Features

• Memory Architecture  64M × 8 organization (512 Mbit) with four internal banks to allow concurrent operations and pipelined Read/Write bursts.
• DDR Double‑Data‑Rate  Two data transfers per clock cycle with differential clock inputs (CK / CK̄) and DLL to align DQ/DQS with clock transitions.
• Data Strobe and I/O  Bidirectional DQS transmitted/received with data; DQS edge‑aligned for READs and centre‑aligned for WRITEs. I/Os are SSTL_2 compatible.
• Programmable Performance  Burst Lengths 2, 4 and 8; Burst Type sequential/interleave; programmable CAS latency options 2, 2.5 and 3.
• Timing and Speed  Rated clock frequency up to 200 MHz for the -5 speed grade (Fck Max, CL=3). Key timing includes a write cycle time (word/page) of 15 ns and an access time of 700 ps.
• Power  Supply voltage range VDD/VDDQ: 2.5 V ± 0.1 V (−5 speed grade) / 2.5 V to 2.7 V specified.
• Refresh and Power‑Down Modes  Auto Refresh and Self Refresh supported, plus Auto Precharge functionality for standard DDR management.
• Package and Temperature  66‑TSSOP (0.400", 10.16 mm width) TSOP‑II package; operating ambient temperature 0 °C to 70 °C (TA).

Typical Applications

• Embedded memory subsystems  Use as onboard DDR memory where a 512‑Mbit parallel DDR SDRAM in a 66‑pin TSOP‑II is required.
• Mid‑speed system memory  Suitable for systems designed around a 200 MHz clock (−5 speed grade) with programmable CAS latency and burst options.
• Compact board designs  Fits 66‑TSSOP footprint constraints while providing standard DDR features such as DQS, DLL, and SSTL_2 I/O.

Unique Advantages

• Compact TSOP‑II package:  Provides a 66‑pin 0.400" width footprint for space‑constrained PCB layouts.
• SSTL_2 compatible I/O:  Ensures standard signaling for systems using 2.5 V SSTL_2 interfaces.
• Flexible performance settings:  Programmable burst lengths (2/4/8) and CAS latency (2 / 2.5 / 3) let designers tune throughput and latency.
• Standard DDR timing and control:  Differential clock inputs, DLL, DQS alignment, auto/self refresh and auto precharge simplify memory timing management.
• Commercial temperature rating:  Specified for 0 °C to 70 °C ambient operation for typical commercial applications.

Why Choose IS43R86400D-5TL-TR?

The IS43R86400D-5TL-TR delivers a standards‑based 512‑Mbit DDR SDRAM solution with programmable latency, burst control and SSTL_2 compatible I/O in a 66‑pin TSOP‑II package. Its DDR pipeline architecture, four internal banks and DLL‑aligned DQ/DQS provide predictable burst behavior and timing control for mid‑speed memory subsystems.

This device is suited to designers and procurement teams specifying compact, parallel DDR memory for commercial temperature applications that require 2.5 V class supply operation and standard DDR features such as auto/self refresh and differential clocking. The combination of package footprint, electrical interface and programmable timing offers design flexibility and straightforward integration into systems targeting the supplied operating ranges and speed grade.

If you would like pricing, lead‑time information or a formal quote for IS43R86400D-5TL-TR, please submit a request to sales or request a quote through your procurement channel. Include part number and required quantity to expedite the response.