IS43R86400D-6TL

The IS43R86400D-6TL is a 512‑Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a 66‑TSSOP (66‑TSOP II) package. It implements double‑data‑rate architecture with a DLL, DQS strobe, and four internal banks to support burst read/write access and pipelined operation.

This device is intended for systems that require high‑speed volatile memory in a small board‑level package and provides programmable timing options, SSTL_2 compatible I/O, and a commercial operating range for straightforward integration into designs requiring parallel DDR memory.

Key Features

• Core / Memory Organization 512 Mbit capacity organized as 64M × 8 with four internal banks to enable concurrent bank operations and pipelined burst transfers.
• Double‑Data‑Rate Architecture Two data transfers per clock cycle with differential clock inputs (CK and CK̄) and a DLL to align DQ/DQS transitions to clock edges.
• Data Strobe and I/O Bidirectional data strobe (DQS) transmitted/received with data—edge‑aligned for READs and centre‑aligned for WRITEs; I/Os are SSTL_2 compatible.
• Programmable Timing and Burst Control Supports burst length 2/4/8, burst types sequential or interleave, and programmable CAS latencies of 2, 2.5 and 3.
• Performance / Timing Rated clock frequency up to 166 MHz (speed grade -6), access time of 700 ps and write cycle (word/page) time of 15 ns.
• Power VDD and VDDQ supply range 2.3 V to 2.7 V (VDD/VDDQ 2.5 V ±0.2 V for -6 speed grade), supporting SSTL_2 signaling levels.
• Refresh and Power Modes Auto Refresh and Self Refresh modes supported; Auto Precharge and T_RAS lockout features included.
• Package and Temperature 66‑pin TSOP‑II (0.400", 10.16 mm width) surface mount package; commercial operating temperature 0 °C to +70 °C (TA).

Typical Applications

• Board‑level memory expansion — Provides 512 Mbit of parallel DDR SDRAM in a compact 66‑TSOP II package for integration on system PCBs.
• Embedded systems — Suitable for embedded designs that require pipelined burst reads/writes and programmable CAS latency options.
• Consumer and industrial electronics — Fits designs that need a commercial temperature range memory solution with SSTL_2 compatible I/O and DDR performance.

Unique Advantages

• DDR pipeline performance: Double‑data‑rate architecture and DLL alignment enable two data transfers per clock cycle with DQS support for reliable data capture.
• Flexible timing control: Programmable CAS latency (2, 2.5, 3) and selectable burst lengths (2/4/8) allow tuning for target system timing and throughput.
• Compact package integration: 66‑TSSOP (TSOP II) package provides a small-footprint, board‑level memory option for space‑constrained designs.
• SSTL_2 compatible I/O: I/O signaling compatible with SSTL_2 standards supports typical parallel DDR system interfaces at the specified supply range.
• Operational robustness: Four internal banks, Auto Refresh and Self Refresh modes, and Auto Precharge support continuous burst operation and refresh management.

Why Choose IS43R86400D-6TL?

The IS43R86400D-6TL offers a verified 512‑Mbit DDR SDRAM building block combining DDR architecture, DQS‑based data capture, and flexible timing controls in a compact 66‑TSOP II package. Its SSTL_2 compatible I/O, programmable CAS latencies, and burst modes make it appropriate for designs that need pipelined, high‑throughput volatile memory with board‑level integration.

This device is well suited to engineers and procurement teams specifying parallel DDR memory for commercial temperature applications who require clear electrical and timing parameters (VDD/VDDQ 2.3–2.7 V, 166 MHz rating, 700 ps access time) and compact package options for system integration.

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