IS43R86400D-6TLI

The IS43R86400D-6TLI is a 512‑Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface and double‑data rate architecture. It provides high‑speed, pipelined read/write transfers with on‑die DLL, bidirectional data strobe (DQS) timing, and SSTL_2‑compatible I/O.

Designed for systems that require a compact, low‑voltage DDR memory device, the IS43R86400D‑6TLI delivers programmable burst lengths and CAS latency options to match varied timing and throughput needs while supporting industrial temperature operation.

Key Features

• Memory Core  Double‑data rate (DDR) SDRAM with internal organization of 64M × 8 (512 Mbit) and four internal banks for concurrent operation.
• Speed & Timing  Supports up to 166 MHz clock frequency (DDR transfers) with access time ~700 ps and write cycle/page timing of 15 ns.
• Programmable Operation  Burst lengths of 2, 4, and 8; sequential and interleave burst types; programmable CAS latency options of 2, 2.5 and 3.
• Data Timing & Integrity  Bidirectional data strobe (DQS) transmitted/received with data (edge‑aligned for READs, centre‑aligned for WRITEs); DLL aligns DQ/DQS with CK transitions; data mask (DM) masks write data on both edges of DQS.
• Interface  Parallel memory interface with differential clock inputs (CK and CK¯) and SSTL_2 compatible I/O signaling.
• Power  Supply voltage range 2.3 V to 2.7 V (device flavor -6 typically specified at 2.5 V ±0.2 V).
• Refresh & Power Modes  Supports Auto Refresh and Self Refresh modes and Auto Precharge to manage data retention and power.
• Package & Mounting  66‑pin TSOP II (66‑TSSOP, 0.400" / 10.16 mm width) for surface mounting.
• Operating Temperature  Industrial range −40 °C to +85 °C (TA).

Unique Advantages

• Compact TSOP-II package: 66‑pin 0.400" (10.16 mm) TSSOP footprint provides area‑efficient mounting for space‑constrained PCBs.
• Flexible timing configuration: Selectable burst lengths and CAS latencies enable tuning for different throughput and latency requirements.
• Low‑voltage operation: 2.3–2.7 V supply reduces system power compared with higher‑voltage memories while matching SSTL_2 I/O standards.
• Robust data capture: DQS‑based data capture with DLL alignment and differential clock inputs ensures reliable double‑data‑rate transfers referenced to both clock and strobe edges.
• Industrial temperature support: Rated for −40 °C to +85 °C, suitable for designs requiring extended ambient operating range.
• Burst and refresh features: Auto Refresh, Self Refresh and Auto Precharge simplify memory management for continuous or low‑power operation.

Why Choose IC DRAM 512MBIT PAR 66TSOP II?

The IS43R86400D‑6TLI positions itself as a compact, configurable DDR SDRAM solution that balances performance and board‑level efficiency. Its DDR pipeline architecture, DQS timing support, and programmable burst/CAS settings make it suitable for designs needing predictable high‑speed parallel memory with SSTL_2 I/O compatibility.

This device is well suited to designs requiring a 512‑Mbit DDR memory in a TSOP‑II package with industrial temperature capability and low‑voltage operation, offering a combination of timing flexibility, refresh modes, and a small footprint for reliable system integration.

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