IS43R86400E-6BLI-TR

The IS43R86400E-6BLI-TR is a volatile DDR SDRAM device providing 512 Mbit of parallel DRAM organized as 64M × 8. It implements DDR SDRAM architecture with a parallel memory interface and operates from a 2.3 V to 2.7 V supply.

With a 60‑TFBGA (8×13) package, a specified clock frequency of 166 MHz and a typical access time of 700 ps, this device targets designs that require compact, high‑density volatile memory in a ball‑grid array package and a wide operating temperature range.

Key Features

• Memory Type: DDR SDRAM (volatile) implemented as 64M × 8 organization, providing 512 Mbit of storage.
• Performance: Specified clock frequency of 166 MHz with an access time of 700 ps and a write cycle time (word page) of 15 ns to characterize timing behavior.
• Voltage and Power: Operates from a 2.3 V to 2.7 V supply range.
• Interface: Parallel memory interface compatible with DDR SDRAM signaling.
• Package: 60‑TFBGA (8×13) supplier device package for compact board footprint and BGA mounting.
• Operating Temperature: Specified ambient operating range of −40°C to 85°C (TA).

Typical Applications

• System Memory: Use as parallel DDR SDRAM memory in systems requiring 512 Mbit volatile storage with 64M × 8 organization.
• Embedded Platforms: Suitable for embedded designs needing a compact 60‑TFBGA package and a 2.3 V–2.7 V power envelope.
• Board‑Level Memory Expansion: Suitable for board designs that require predictable timing (166 MHz clock, 700 ps access time) and defined write cycle timing (15 ns).

Unique Advantages

• High‑density DRAM: 512 Mbit capacity in a 64M × 8 organization provides substantial volatile storage in a single device.
• Compact BGA Package: 60‑TFBGA (8×13) package enables a small board footprint while supporting ball‑grid array mounting.
• Defined Performance Specs: 166 MHz clock frequency and 700 ps access time give clear timing characteristics for system design and validation.
• Low‑voltage Operation: 2.3 V to 2.7 V supply range supports designs targeting lower supply rails.
• Wide Operating Temperature: −40°C to 85°C ambient range for deployment across a broad set of environmental conditions.
• Parallel DDR Interface: Parallel memory interface simplifies integration into systems expecting DDR SDRAM signaling and timing.

Why Choose IS43R86400E-6BLI-TR?

The IS43R86400E-6BLI-TR delivers a compact, 512 Mbit DDR SDRAM solution with defined timing and electrical characteristics—166 MHz clock, 700 ps access time, 15 ns write cycle time, and a 2.3 V–2.7 V supply—packaged in a 60‑TFBGA footprint. Its 64M × 8 organization and parallel interface make it suitable for designs that require clear, verifiable memory performance and a small board area.

This device is appropriate for engineers specifying volatile DDR memory where predictable timing, low‑voltage operation, and a wide ambient temperature range are required. Its specification set supports straightforward evaluation, integration, and system validation in projects that match the listed electrical and mechanical parameters.

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