IS43R86400D-6TL-TR

The IS43R86400D-6TL-TR is a 512 Mbit DDR SDRAM organized as 64M x 8, implemented in a parallel DDR architecture. It provides double-data-rate transfers with dedicated data strobe support, differential clock inputs and an internal DLL for aligned data capture.

This device is designed for compact, commercial-temperature systems requiring a 512 Mbit parallel DDR memory in a 66-pin TSOP-II package, offering programmable burst lengths and CAS latency options for flexible memory timing and bandwidth management.

Key Features

• Memory Core 512 Mbit DDR SDRAM organized as 64M × 8 with four internal banks to support concurrent operations and pipelined read/write bursts.
• Double-Data-Rate Architecture Two data transfers per clock cycle with DQS transmitted/received alongside data; DQS is edge-aligned for READs and center-aligned for WRITEs.
• Clocking and Timing Differential clock inputs (CK / CK̅) and an internal DLL to align DQ/DQS with clock transitions. Programmable CAS latencies of 2, 2.5 and 3 and burst lengths of 2, 4 and 8.
• Interface and I/O Parallel memory interface with SSTL_2 compatible I/O and Data Mask (DM) support that masks write data on both edges of DQS.
• Performance Frequency rating up to 166 MHz (speed grade -6) with an access time of 700 ps and write cycle time (word page) of 15 ns.
• Power VDD and VDDQ operating range 2.3 V to 2.7 V (device -6 grade corresponds to 2.5 V ±0.2 V).
• Refresh and Power Modes Supports Auto Refresh and Self Refresh modes plus Auto Precharge for standard DRAM refresh management.
• Package and Temperature 66‑TSSOP (66‑TSOP II) package with a 0°C to +70°C (TA) commercial operating temperature range.

Typical Applications

• Compact embedded systems Use where a 512 Mbit parallel DDR memory in a 66‑TSOP II package is required for space-constrained boards operating in commercial temperature ranges.
• High-bandwidth buffering Systems that require burst-capable DDR buffers with programmable CAS latency and DQS-controlled data capture.
• Standard commercial electronics Devices designed for commercial environments (0°C to +70°C) that need a 2.5 V class parallel DDR memory with SSTL_2 I/O.

Unique Advantages

• DDR double-data-rate transfers: Enables two data transfers per clock cycle to increase effective data throughput without raising clock frequency.
• Flexible timing configuration: Programmable CAS latency (2 / 2.5 / 3) and selectable burst lengths (2/4/8) allow tuning for system timing and performance trade-offs.
• SSTL_2 compatible I/O with DQS: DQS-driven capture and SSTL_2 signaling improve data integrity for parallel DDR interfaces.
• Compact TSOP-II package: 66‑TSSOP (0.400", 10.16 mm width) provides a small board footprint for space-limited designs.
• Commercial temperature rating: Specified operation from 0°C to +70°C for standard commercial applications.
• Standard DDR management features: Auto Refresh, Self Refresh and Auto Precharge support simplify memory refresh and low-power states.

Why Choose IS43R86400D-6TL-TR?

The IS43R86400D-6TL-TR targets designs that require a compact, parallel DDR SDRAM solution with configurable latency and burst behavior. Its combination of 512 Mbit density, SSTL_2 I/O with DQS, differential clocking and an internal DLL delivers predictable timing and burst performance in a small 66‑TSOP II package.

This device is suited to commercial-temperature hardware where a 2.3–2.7 V supply, programmable timing and standard DDR refresh modes are required. Supporting datasheet details and electrical parameters enable engineered integration and timing validation for system-level design.

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