IS43R86400D-6TLI-TR

The IS43R86400D-6TLI-TR is a 512‑Mbit DDR SDRAM organized as 64M × 8, implementing a pipelined, double‑data‑rate architecture with four internal banks for concurrent operation. It provides a parallel memory interface with SSTL_2 compatible I/O, DQS timing, and differential clock inputs to support high‑speed read/write burst transfers.

This device targets systems requiring a compact, low‑voltage DDR memory solution with programmable burst length and CAS latency options, available in a 66‑TSOP II package and an industrial operating temperature range.

Key Features

• Core Architecture  Pipelined DDR SDRAM with double‑data‑rate transfers and four internal banks to enable concurrent operations and continuous burst access.
• Memory Organization  512 Mbit total capacity organized as 64M × 8 (16M × 32 and 32M × 16 options documented in datasheet).
• Data Interface  Parallel DDR interface with bidirectional data strobe (DQS), differential clock inputs (CK/CK̄) and SSTL_2 compatible I/O for timing‑sensitive data capture.
• Programmable Timing and Burst  Supports burst lengths of 2, 4 and 8, sequential and interleave burst types, and programmable CAS latency values of 2, 2.5 and 3.
• Performance  Specified for up to approximately 166 MHz clock operation (speed grade -6) with typical access characteristics including 700 ps access time and 15 ns write cycle time (word page).
• Power  Operates from 2.3 V to 2.7 V (VDD/VDDQ variants detailed in datasheet) to support low‑voltage system designs.
• Package and Mounting  Supplied in a 66‑TSSOP / 66‑TSOP II package (0.400", 10.16 mm width) for compact board integration.
• Operating Temperature  Industrial temperature range of -40°C to +85°C (TA) for extended environment support.

Typical Applications

• System DDR memory  Provides 512‑Mbit parallel DDR SDRAM for systems that require pipelined, double‑data‑rate memory with flexible burst and latency settings.
• High‑speed buffering  Used where high‑throughput read/write bursts are needed, enabled by DQS timing, differential clocks, and a DDR architecture supporting 166 MHz operation.
• Low‑voltage memory subsystems  Suitable for designs constrained to a 2.3 V–2.7 V supply window, leveraging SSTL_2 compatible I/O levels.
• Industrial temperature designs  Suitable for applications demanding operation across -40°C to +85°C ambient temperatures.

Unique Advantages

• Double‑data‑rate transfers: Two data transfers per clock cycle increase effective bandwidth without raising clock frequency.
• DQS and differential clocking: Bidirectional DQS with edge/cycle alignment and differential CK/CK̄ provide reliable timing for both reads and writes.
• Flexible performance tuning: Programmable burst lengths and CAS latencies let designers balance latency and throughput for target workloads.
• SSTL_2 compatible I/O: Industry‑standard I/O signaling simplifies integration with SSTL_2 memory controllers and interfaces.
• Compact package: 66‑TSOP II (0.400", 10.16 mm width) provides a small footprint option for space‑constrained boards.
• Industrial temperature support: Rated for -40°C to +85°C to address extended environmental requirements.

Why Choose IC DRAM 512MBIT PAR 66TSOP II?

The IS43R86400D-6TLI-TR delivers a practical balance of capacity, performance and configurability in a compact 66‑TSOP II package. Its pipelined DDR architecture with DQS timing, differential clocks and SSTL_2 I/O supports robust high‑speed data transfers while offering programmable burst and latency options for design flexibility.

This device is well suited to designs that require a 512‑Mbit parallel DDR memory element operating at low voltage and across industrial temperatures, providing designers with a known‑quantity memory component for scalable memory subsystem integration.

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