IS43R86400D-6BLI

The IS43R86400D-6BLI is a 512 Mbit DDR SDRAM organized as 64M × 8 with a parallel memory interface in a compact 60-TFBGA (8×13) package. It implements a double-data-rate architecture with a DLL and differential clock inputs to support high-speed, pipelined read and write burst transfers.

Designed for systems requiring high-throughput volatile memory, the device offers programmable burst length and CAS latency, built-in refresh modes and an industrial operating temperature range for reliable operation across a variety of embedded applications.

Key Features

• Memory Core  512 Mbit DDR SDRAM organized as 64M × 8 with four internal banks to enable concurrent operations and pipelined access.
• Double-Data-Rate Architecture  Two data transfers per clock cycle with bidirectional data strobe (DQS) used for capturing data; DQS is edge-aligned for READs and centre-aligned for WRITEs.
• Clocking and Timing  Differential clock inputs (CK and CK̅) and an on-chip DLL align DQ/DQS transitions with clock; specified clock frequency up to 166 MHz and access time of 700 ps.
• SSTL_2-Compatible I/O  I/O signaling meets SSTL_2 levels with VDD/VDDQ supply in the 2.3 V to 2.7 V range.
• Flexible Burst and Latency Options  Burst lengths of 2, 4, or 8 and programmable CAS latencies of 2, 2.5, and 3 to match system timing requirements.
• Data Integrity Controls  Data Mask (DM) masks write data on both edges of the data strobe; Auto Refresh and Self Refresh modes supported.
• Performance Timing  Write cycle time (word/page) specified at 15 ns to support sustained burst transfers.
• Package and Temperature  60-TFBGA (8×13) supplier device package with an operating temperature range of −40°C to +85°C (TA).

Typical Applications

• High-speed data buffering  Use where pipelined, burst-oriented DDR transfers are required for temporary data storage and throughput smoothing.
• Embedded system memory  Suitable as system or subsystem DRAM for designs that need a 512 Mbit parallel DDR memory with programmable latency and burst control.
• Industrial electronics  The −40°C to +85°C operating range supports deployment in temperature-variable industrial environments.

Unique Advantages

• High effective data rate:  Double-data-rate architecture doubles transfers per clock to increase throughput without raising clock speed.
• Flexible timing configuration:  Programmable CAS latencies (2 / 2.5 / 3) and multiple burst lengths (2, 4, 8) allow tuning for system timing and performance trade-offs.
• SSTL_2 I/O compatibility:  Standard SSTL_2 signaling and VDD/VDDQ supply range (2.3 V–2.7 V) ease integration with SSTL_2 host interfaces.
• Robust refresh and power modes:  Auto Refresh and Self Refresh modes preserve data integrity during idle periods and low-activity states.
• Compact, production-ready package:  60-TFBGA (8×13) footprint provides a small form factor for space-constrained boards.
• Industrial temperature range:  Rated for −40°C to +85°C (TA) for reliable operation in harsher ambient conditions.

Why Choose IS43R86400D-6BLI?

The IS43R86400D-6BLI delivers a balanced combination of capacity, configurable latency, and DDR throughput in a compact 60-ball TFBGA package. Its DLL-based timing, differential clocking, and SSTL_2-compatible I/O make it suitable for systems that require predictable burst performance and flexible timing options.

This device is well suited to engineers designing embedded or industrial systems that require a 512 Mbit parallel DDR memory with programmable burst behavior, on-chip refresh support, and an extended operating temperature range for durable field operation.

Request a quote or submit an inquiry to receive pricing and availability information for the IS43R86400D-6BLI and to discuss your design requirements with a product specialist.