IS43R86400E-6TLI-TR
| Part Description |
IC DRAM 512MBIT PAR 66TSOP II |
|---|---|
| Quantity | 41 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS43R86400E-6TLI-TR – IC DRAM 512MBIT PAR 66TSOP II
The IS43R86400E-6TLI-TR is a 512 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface. It is organized as 64M × 8 and delivers synchronous DRAM operation for systems that require compact, board-mounted memory.
With a 66-pin TSOP II package and support for 2.3 V to 2.7 V supply, this device addresses applications requiring moderate-speed DDR performance with a specified clock frequency of 166 MHz and an access time of 700 ps.
Key Features
- Memory Core 512 Mbit (64M × 8) DDR SDRAM organized for parallel access.
- Performance Rated clock frequency of 166 MHz and an access time of 700 ps; word page write cycle time of 15 ns.
- Voltage Operates from 2.3 V to 2.7 V, supporting low-voltage DDR system designs.
- Package Supplied in a 66-pin TSOP II (66-TSSOP / 0.400" width, 10.16 mm) package for board-level mounting.
- Interface Parallel memory interface for synchronous DDR operation.
- Operating Range Specified operating temperature range: −40°C to 85°C (TA).
Unique Advantages
- High-density memory: 512 Mbit capacity provides substantial on-board storage in a single device footprint.
- DDR performance: 166 MHz clocking and 700 ps access time enable synchronous, higher-speed memory transfers compared to single-rate DRAM.
- Low-voltage operation: 2.3 V–2.7 V supply range supports lower-power system designs.
- Compact package: 66-TSOP II package offers a space-efficient, surface-mount solution for dense PCB layouts.
- Wide ambient range: −40°C to 85°C rating supports deployment across a broad range of environmental conditions.
Why Choose IS43R86400E-6TLI-TR?
The IS43R86400E-6TLI-TR is positioned for designs that require a high-density, parallel DDR SDRAM device in a compact 66-TSOP II package. Its combination of 512 Mbit capacity, 166 MHz clocking, and low-voltage operation makes it suitable for systems that need synchronous memory with defined timing characteristics and a wide operating temperature range.
For engineers specifying board-level memory where footprint, power supply range, and predictable DDR timing are key considerations, this device provides a verifiable, specification-driven option backed by clear electrical and mechanical parameters.
If you would like pricing, availability, or a formal quote for IS43R86400E-6TLI-TR, please request a quote or contact the sales team to discuss your requirements and lead times.
