IS43R86400E-6BL-TR

The IS43R86400E-6BL-TR from ISSI is a 512 Mbit volatile DRAM device implemented as SDRAM (DDR) with a parallel memory interface and a 64M × 8 organization. It delivers timed memory access suitable for systems requiring a 512 Mbit parallel DDR memory component with a compact 60‑TFBGA (8×13) package.

Key attributes include a 166 MHz clock frequency, 700 ps access time, a 2.3 V–2.7 V supply range, and an operating ambient temperature range of 0°C to 70°C, making it appropriate for designs that require defined timing, compact packaging, and low-voltage DDR operation.

Key Features

• Memory Architecture 512 Mbit SDRAM (DDR) organized as 64M × 8 with a parallel memory interface for standard DRAM system integration.
• Performance Supports a clock frequency of 166 MHz and specified access time of 700 ps, with a write cycle time (word/page) of 15 ns for predictable timing behavior.
• Voltage Operates from 2.3 V to 2.7 V, enabling low-voltage DDR system designs.
• Package Supplied in a 60‑TFBGA (8×13) package for compact board-level footprint and surface-mount assembly.
• Operating Temperature Rated for ambient operation from 0°C to 70°C (TA), suitable for standard-temperature electronic applications.
• Device Type Volatile DRAM memory formatted as parallel SDRAM (DDR) for direct use in parallel-memory subsystems.

Typical Applications

• Embedded memory expansion — Provides 512 Mbit of parallel DDR SDRAM capacity where defined clock and access timing are required.
• Consumer electronics memory subsystems — Fits board-level designs needing compact BGA packaging and a low-voltage DDR memory interface.
• Industrial control systems — Use in systems operating within 0°C to 70°C that require predictable SDRAM timing and a parallel interface.

Unique Advantages

• Defined DDR timing — 166 MHz clock frequency and 700 ps access time provide measurable timing characteristics for system design.
• Compact BGA package — 60‑TFBGA (8×13) packaging supports space-constrained PCB layouts and surface-mount assembly.
• Low-voltage operation — 2.3 V–2.7 V supply range supports designs targeting reduced power rails for DDR memory.
• Predictable write performance — 15 ns write cycle time (word/page) helps designers account for memory timing in system-level scheduling.
• Standard memory organization — 64M × 8 layout aligns with common memory-mapping schemes for parallel DRAM integration.

Why Choose IS43R86400E-6BL-TR?

The IS43R86400E-6BL-TR positions itself as a straightforward 512 Mbit parallel DDR SDRAM option from ISSI, offering specified timing (166 MHz clock, 700 ps access) and low-voltage operation (2.3 V–2.7 V) in a compact 60‑TFBGA package. Its defined performance and organization (64M × 8) make it suitable for designs that require measurable DDR timing and a small board footprint.

This device is appropriate for engineers and procurement teams specifying a 512 Mbit parallel SDRAM for embedded, consumer, or industrial applications operating within a 0°C–70°C ambient range who need clear electrical and timing parameters for system integration.

For pricing, availability, or to request a quote for IS43R86400E-6BL-TR, submit your requirements and a sales team member will respond with details and lead-time information.