IS43R83200B-5TL-TR

The IS43R83200B-5TL-TR is a 256Mbit double data rate (DDR) synchronous DRAM organized as 32M × 8 with a parallel memory interface. It implements a 4-bank DDR architecture with SSTL_2 signaling, differential clock inputs and a DLL for aligned data strobes (DQS) and data transfers.

Designed for commercial-temperature designs, this device offers high-speed operation (up to 200 MHz clock rate for supported CAS latencies), flexible programmable latency and burst options, and a compact 66‑TSOP II package for space-constrained boards.

Key Features

• Memory Core  256 Mbit DDR synchronous DRAM organized as 32M × 8 with 4-bank operation (BA0, BA1).
• Double Data Rate Architecture  Two data transfers per clock cycle with bidirectional data strobe (DQS) transmitted/received with data and DLL alignment of DQ/DQS to CLK.
• Interface and Signaling  SSTL_2-compatible interface with differential clock inputs (CLK and /CLK); data and data mask referenced to both edges of DQS.
• Programmable Timing  Supports programmable CAS latencies of 2.0 / 2.5 / 3.0 and programmable burst lengths of 2 / 4 / 8 with sequential or interleave burst type.
• Performance  Clock frequency up to 200 MHz (device variants), CAS access-time around ±0.70 ns for selected latencies and measured access times from clock edges.
• Refresh and Power Management  8192 refresh cycles per 64 ms with Auto Refresh and Self Refresh support; VDD/VDDQ supply range 2.3 V to 2.7 V.
• Timing and Cycle Metrics  Write cycle time (word page) specified at 15 ns; key timing parameters defined in device datasheet for design integration.
• Package and Temperature  66‑pin TSOP II (0.400", 10.16 mm width) supply package; commercial operating temperature 0°C to +70°C (TA).

Unique Advantages

• High-speed DDR operation: Enables two data transfers per clock cycle with device support up to 200 MHz, allowing higher throughput within the same clock budget.
• Flexible latency and burst control: Programmable CAS latencies (2/2.5/3) and burst length/type options support tuning for diverse memory access patterns.
• Synchronized DQS and DLL alignment: Bidirectional DQS with DLL alignment improves timing margin between data and clock for reliable DDR transfers.
• Standard SSTL_2 signaling: Differential clock and SSTL_2 compatibility simplify integration into systems that use standard DDR signaling conventions.
• Compact board footprint: 66‑TSOP II package provides a low-profile option for space-constrained PCBs while retaining full parallel DDR functionality.
• Power and refresh management: 2.3–2.7 V supply range with Auto Refresh and Self Refresh support helps manage power and data retention within system constraints.

Why Choose IS43R83200B-5TL-TR?

The IS43R83200B-5TL-TR positions itself as a high-speed, compact DDR memory component suited to commercial-temperature designs requiring a 256 Mbit parallel DDR device. Its programmable CAS latencies, burst options, and DLL-aligned DQS provide designers with timing flexibility and reliable data timing at clock rates up to 200 MHz.

This device is appropriate for designs that need a 32M × 8 DDR memory in a 66‑TSOP II package, with SSTL_2 signaling and standard refresh capabilities. The combination of defined timing parameters, supported refresh modes, and documented electrical ranges provides predictable integration for embedded and system-level memory subsystems.

Request a quote or submit a parts inquiry for IS43R83200B-5TL-TR to evaluate availability and integration details for your design.