IS43R32800D-5BL

The IS43R32800D-5BL is a 256‑Mbit DDR SDRAM organized as 8M × 32, delivering double‑data‑rate transfers through a pipelined architecture with two data accesses per clock cycle. The device implements four internal banks, programmable burst length and CAS latency, and SSTL_2 compatible I/O for synchronous high‑speed memory interfaces.

Designed for applications requiring parallel DDR memory in a compact 144‑LFBGA (12×12) package, the device supports up to 200 MHz clock frequency, VDD/VDDQ operation from 2.3 V to 2.7 V, and a commercial operating temperature range of 0°C to 70°C.

Key Features

• Core & Architecture  8M × 32 organization (256 Mbit) with four internal banks and pipelined operation to support continuous read/write burst accesses.
• DDR Performance  Double‑data‑rate architecture provides two data transfers per clock cycle; maximum clock frequency up to 200 MHz (speed grade -5).
• Data Timing & Capture  Bidirectional data strobe (DQS) transmitted/received with data; DQS edge‑aligned for READs and centre‑aligned for WRITEs; DLL aligns DQ/DQS with clock transitions.
• Interface & Commands  Differential clock inputs (CK and CK̄); commands registered on positive CK edges; data and data mask referenced to both edges of DQS.
• Burst & Latency Options  Burst lengths of 2, 4 and 8 with sequential and interleave burst types; programmable CAS latency options 2, 2.5 and 3.
• Refresh & Power Modes  Auto Refresh and Self Refresh modes supported; Auto Precharge and TRAS lockout (tRAP = tRCD) implemented for memory integrity.
• Electrical  Supply voltage range VDD/VDDQ: 2.3 V to 2.7 V (datasheet nominal 2.5 V ±0.2 V); SSTL_2 compatible I/O signaling.
• Package & Temperature  144‑LFBGA (12×12) package; commercial temperature range 0°C to +70°C (TA).

Typical Applications

• Embedded memory subsystems  Provides a 256‑Mbit DDR SDRAM option for systems requiring parallel DDR memory in a compact BGA package.
• High‑speed data buffering  Suitable where double‑data‑rate transfers, burst access and programmable CAS latency are required for bursty data flows.
• Compact module integration  144‑LFBGA (12×12) footprint supports designs constrained by board space that require parallel DDR memory.

Unique Advantages

• High density in a small package: 256‑Mbit capacity in a 144‑LFBGA (12×12) helps maximize memory per footprint area.
• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without raising clock rate, enabled up to 200 MHz.
• Flexible timing control: Programmable CAS latency (2, 2.5, 3) and selectable burst lengths support tuning for system timing and performance tradeoffs.
• Robust data capture: DQS with edge/center alignment and DLL synchronization improves reliable data capture at both read and write operations.
• SSTL_2 compatible I/O: Standard signaling for common DDR memory interfaces simplifies integration into SSTL_2 systems.
• Power and refresh modes: Auto Refresh and Self Refresh modes provide standard DRAM maintenance options for preserving data integrity.

Why Choose IS43R32800D-5BL?

The IS43R32800D-5BL delivers a compact, programmable 256‑Mbit DDR SDRAM solution with core features—four internal banks, DLL timing, DQS strobe handling and SSTL_2 I/O—that meet the needs of systems requiring parallel DDR memory in a small BGA footprint. Its support for up to 200 MHz operation, selectable burst behavior and CAS latency settings enables designers to balance bandwidth and timing for their specific application.

This device is appropriate for designs that require a verified DDR memory building block with defined electrical, timing and package specifications, and for teams seeking predictable integration targets with standard DDR features and refresh modes.

If you would like pricing, availability or a formal quote for IS43R32800D-5BL, request a quote or contact sales to discuss your requirements and lead times.