IS43R32800B-6BL

The IS43R32800B-6BL is a 256 Mbit Double Data Rate (DDR) synchronous DRAM organized as 8M × 32 with a parallel SSTL_2 interface. It implements a 4-bank architecture with bidirectional data strobe (DQS), differential clock inputs (CLK and /CLK), and an on-die DLL for data/timing alignment.

Packaged in a 144-ball MiniBGA (12 × 12 mm, 0.8 mm pitch), the device targets systems that require compact DDR memory integration with programmable timing, refresh control and low-voltage SSTL_2 operation.

Key Features

• Core architecture Double Data Rate (DDR) synchronous DRAM with two data transfers per clock cycle; DQS is transmitted/received with data and DLL aligns DQ/DQS transitions with clock edges.
• Memory organization & capacity 256 Mbit organized as 8M × 32 (4 banks); configuration described as 2M × 32 × 4 banks and 2,097,152-word × 32-bit internal organization.
• Performance Listed clock frequency 166 MHz; datasheet indicates device can achieve clock rates up to 200 MHz. Access time from clock is on the order of ±0.70 ns for supported CAS latencies.
• Flexible timing & burst options Programmable CAS latency options (2.0 / 2.5 / 3.0), programmable burst lengths (2 / 4 / 8) and selectable burst type (Sequential / Interleave).
• Refresh and power modes 4096 refresh cycles per 64 ms with support for auto refresh and self refresh; auto precharge and all-bank precharge controlled via A8/AP.
• Voltage & signaling VDD/VDDQ = 2.5 V ±0.2 V with supply range 2.3 V – 2.7 V; SSTL_2 compliant parallel interface.
• Package 144-ball FBGA / 144-MiniBGA (12 × 12 mm body, 0.8 mm ball pitch) for a compact board footprint.
• Operating temperature Commercial temperature range 0°C to +70°C (TA); an industrial temperature variant is noted in the datasheet.
• Timing detail Key timing parameters provided in the datasheet, including write cycle time (word page) of 15 ns and CAS-specific timing tables.

Unique Advantages

• High-throughput DDR operation: DDR architecture with bidirectional DQS and differential clocking supports two data transfers per clock for increased effective bandwidth.
• Configurable timing and bursts: Multiple CAS latency and burst length options allow designers to tune memory timing to application requirements.
• Compact BGA footprint: 144-ball MiniBGA (12 × 12 mm) provides dense memory integration while minimizing PCB area.
• SSTL_2 voltage compatibility: Operates within 2.3–2.7 V supply range and VDD/VDDQ = 2.5 V ±0.2 V to match SSTL_2 signaling environments.
• Robust refresh management: 4096 refresh cycles per 64 ms plus auto and self refresh modes help maintain data integrity across power and idle conditions.
• Precise timing alignment: On-die DLL and DQS referencing improve timing margins for read/write transactions.

Why Choose IS43R32800B-6BL?

The IS43R32800B-6BL provides a compact 256 Mbit DDR SDRAM solution with programmable timing, multi-bank architecture and SSTL_2 signaling compatibility. Its 144-ball MiniBGA package and documented timing tables make it suitable for designs that require dense, configurable DDR memory implemented in a small footprint.

Manufactured by Integrated Silicon Solution, Inc. (ISSI) and supported by a published datasheet, the device is a practical option for systems needing defined DDR performance characteristics, flexible timing/burst options, and documented refresh/power modes.

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