IS43R32400E-5BLI-TR

The IS43R32400E-5BLI-TR is a 128 Mbit volatile DRAM implemented as SDRAM - DDR with a parallel memory interface and a 4M x 32 organization. It delivers up to 200 MHz clock operation with a compact 144‑LFBGA (12×12) package, targeting systems that require on‑board parallel DDR memory in a small footprint.

Key engineering attributes include a 700 ps access time, a write cycle time (word/page) of 15 ns, and a nominal supply range of 2.3 V to 2.7 V, supporting deployment across a broad temperature span from −40 °C to 85 °C.

Key Features

• Memory Core 128 Mbit DRAM organized as 4M x 32 for parallel data paths and predictable bus mapping.
• DDR SDRAM Technology SDRAM - DDR architecture with a parallel memory interface and a maximum clock frequency of 200 MHz for synchronous operation.
• Performance 700 ps access time and 15 ns write cycle time (word/page) to support time‑sensitive memory transactions.
• Power Operation within a 2.3 V to 2.7 V supply window to match systems designed for low‑voltage DDR memory.
• Package & Mounting 144‑LFBGA (12×12) supplier device package for high‑density board integration and compact system layouts.
• Operating Range Specified ambient temperature range of −40 °C to 85 °C for extended environmental coverage.

Typical Applications

• Embedded memory subsystems — Acts as on‑board parallel DDR SDRAM where a 128 Mbit storage element is required for program or data buffering.
• Frame buffer and temporary storage — Provides synchronous parallel memory for short‑term data staging with 700 ps access characteristics.
• Compact system boards — The 144‑LFBGA (12×12) package supports high‑density PCB designs that need DDR memory in a small footprint.

Unique Advantages

• Balanced capacity and organization: 128 Mbit in a 4M x 32 arrangement enables straightforward 32‑bit bus implementations.
• Synchronous DDR operation at 200 MHz: Enables predictable timing for systems designed around parallel DDR interfaces.
• Low‑voltage operation: 2.3 V to 2.7 V supply range supports low‑power DDR system designs.
• Compact BGA packaging: 144‑LFBGA (12×12) minimizes PCB area while maintaining robust interconnect density.
• Wide operating temperature: −40 °C to 85 °C supports deployment in a range of ambient environments.

Why Choose IS43R32400E-5BLI-TR?

The IS43R32400E-5BLI-TR positions itself as a compact, specification‑driven DDR SDRAM device for designs that require 128 Mbit of parallel DRAM with reliable timing characteristics. Its combination of 200 MHz clock capability, 700 ps access time, and 15 ns write cycle timing makes it suitable for systems that need synchronous parallel memory with predictable performance.

With a low‑voltage supply range and a 144‑LFBGA (12×12) package, this device is appropriate for space‑conscious board layouts and environments spanning −40 °C to 85 °C. It is provided by Integrated Silicon Solution Inc and is aimed at designers integrating parallel DDR memory into embedded and compact systems.

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