IS43R32400E-5BLI
| Part Description |
IC DRAM 128MBIT PAR 144LFBGA |
|---|---|
| Quantity | 21 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 144-LFBGA (12x12) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 700 ps | Grade | Industrial | ||
| Clock Frequency | 200 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 144-LFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS43R32400E-5BLI – 128 Mbit DDR SDRAM, 144-LFBGA
The IS43R32400E-5BLI is a volatile 128 Mbit DRAM organized as 4M × 32 and implemented as DDR SDRAM with a parallel memory interface. It delivers high-speed parallel memory access at a 200 MHz clock rate with an access time of 700 ps and a word/page write cycle time of 15 ns.
Packaged in a 144-LFBGA (12 × 12) footprint and specified for operation from −40°C to 85°C with a supply voltage range of 2.3 V to 2.7 V, this device is suitable for systems requiring compact, fast parallel DDR memory.
Key Features
- Memory Type & Architecture Volatile DRAM implemented as DDR SDRAM with a parallel memory interface and a memory organization of 4M × 32, providing 128 Mbit total capacity.
- Performance Operates at a 200 MHz clock frequency with an access time of 700 ps and a write cycle time (word/page) of 15 ns for predictable memory timing.
- Power Specified supply voltage range from 2.3 V to 2.7 V to support system power budgets within that window.
- Package 144-LFBGA package (12 × 12) for a compact board footprint and standardized BGA assembly.
- Temperature Range Rated for operation from −40°C to 85°C (TA), supporting a broad commercial to industrial temperature envelope.
Unique Advantages
- Parallel DDR architecture: Enables high-throughput parallel memory access consistent with DDR SDRAM timing and organization.
- Predictable timing performance: 700 ps access time and 15 ns write cycle time provide deterministic behavior for timing-sensitive designs.
- Compact BGA footprint: 144-LFBGA (12 × 12) package minimizes PCB area while supporting standard BGA assembly processes.
- Wide operating temperature: −40°C to 85°C specification supports deployment across a range of environmental conditions.
- Low-voltage operation: 2.3 V to 2.7 V supply range helps align with low-voltage system power domains.
Why Choose IS43R32400E-5BLI?
The IS43R32400E-5BLI offers a compact, parallel DDR SDRAM solution delivering 128 Mbit capacity with a 4M × 32 organization and 200 MHz operation. Its combination of deterministic timing (700 ps access), a small 144-LFBGA package, and a wide operating temperature range makes it suitable for designs that require reliable, high-speed parallel memory in a space-efficient form factor.
Manufactured by ISSI (Integrated Silicon Solution Inc), this device is targeted at engineers needing a clearly specified DDR DRAM component with defined electrical and thermal limits for use in system memory subsystems.
Request a quote or submit a product inquiry to receive pricing, lead-time, and availability information for the IS43R32400E-5BLI.
