IS43R32400E-4BL-TR
| Part Description |
IC DRAM 128MBIT PAR 144LFBGA |
|---|---|
| Quantity | 95 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 144-LFBGA (12x12) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 250 MHz | Voltage | 2.4V ~ 2.6V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 16 ns | Packaging | 144-LFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS43R32400E-4BL-TR – IC DRAM 128MBIT PAR 144LFBGA
The IS43R32400E-4BL-TR is a 128 Mbit parallel DDR SDRAM device organized as 4M × 32 and supplied in a 144‑LFBGA (12×12) package. It provides volatile DRAM storage for systems that require parallel DDR memory with a 250 MHz clock capability and a supply voltage range of 2.4 V to 2.6 V.
Typical deployment targets are designs that need compact, board‑mounted parallel DRAM in a 144‑ball LFBGA footprint while operating within a 0 °C to 70 °C ambient range.
Key Features
- Memory Type & Architecture 128 Mbit volatile DRAM organized as 4M × 32, implemented as DDR SDRAM for parallel memory systems.
- Performance Supports a clock frequency up to 250 MHz with an access time of 700 ps and a word page write cycle time of 16 ns.
- Power Operates from a supply voltage range of 2.4 V to 2.6 V.
- Package Supplied in a 144‑LFBGA (12×12) package suitable for compact board mounting.
- Interface Parallel memory interface suitable for systems that implement parallel DDR signaling and memory mapping.
- Operating Range Rated for ambient operation from 0 °C to 70 °C (TA).
Typical Applications
- Parallel DDR memory subsystems — Provides 128 Mbit of DDR SDRAM capacity for systems using parallel memory interfaces.
- Embedded systems — Compact LFBGA package and 4M × 32 organization suit board‑mounted memory in embedded devices operating within 0 °C to 70 °C.
- Memory expansion for controllers — Acts as external DRAM storage where a parallel DDR interface and the specified supply voltage are available.
Unique Advantages
- DDR SDRAM architecture: Delivers parallel DDR memory behavior in a standard DRAM format for designs requiring this specific interface.
- High clock capability: 250 MHz clock frequency support enables higher data throughput within the device’s specified timing limits.
- Compact package: 144‑LFBGA (12×12) provides a small footprint for space‑constrained PCB layouts.
- Narrow supply range: 2.4 V to 2.6 V operation aligns with systems designed around this voltage rail for consistent power integration.
- Deterministic timing: Specified access time (700 ps) and write cycle time (16 ns) allow predictable memory timing analysis during system design.
Why Choose IC DRAM 128MBIT PAR 144LFBGA?
IS43R32400E-4BL-TR positions itself as a purpose‑specific parallel DDR SDRAM option when a 128 Mbit, 4M × 32 memory organization in a compact 144‑LFBGA package is required. Its defined timing parameters, clock capability, and tight supply range make it suitable for designs where matching memory interface characteristics and predictable timing are priorities.
This device is appropriate for engineers and procurement teams specifying board‑mounted parallel DRAM for embedded and system memory expansion applications that operate within the 0 °C to 70 °C ambient range and the stated electrical characteristics.
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