IS43R32800B-5BL

The IS43R32800B-5BL is a 256 Mbit (8M × 32) Double Data Rate (DDR) synchronous DRAM packaged in a 144-ball Mini BGA (12.0 mm × 12.0 mm, 0.8 mm pitch). It implements a 4-bank architecture with a parallel SSTL_2-compatible interface and a differential clock input for high-speed memory transfers.

Designed for systems that require DDR synchronous DRAM operation, the device supports clock rates up to 200 MHz, on-die DLL alignment, and programmable burst lengths and CAS latencies to balance throughput and latency for board-level memory subsystems.

Key Features

• Memory Core 256 Mbit organized as 8M × 32 with 4-bank operation (2,097,152 words × 32 bits) for parallel DRAM usage.
• DDR Architecture & Performance Double Data Rate operation with data transferred on both clock edges; supports clock frequencies up to 200 MHz and CAS latency options (2.0 / 2.5 / 3.0) with access time ±0.70 ns at specified latencies.
• Interface & Timing SSTL_2 interface with differential clock inputs (CLK and /CLK), bidirectional data strobe (DQS), programmable burst length (2/4/8) and burst type (sequential/interleave).
• On-Die Features Integrated DLL to align DQ and DQS transitions with CLK, supporting reliable data timing at high clock rates.
• Refresh & Power Supports 4096 refresh cycles per 64 ms (4-bank concurrent refresh), auto refresh and self refresh. Supply voltage range listed as 2.3 V to 2.7 V (datasheet references VDD/VDDQ = 2.5 V ±0.2 V).
• Package & Mounting 144-ball LFBGA / MiniBGA package (12 × 12 mm body, 0.8 mm ball pitch) suitable for compact board-level mounting.
• Temperature Range Commercial operating temperature 0°C to +70°C (TA) as specified for this device variant.
• Additional Timing Write cycle time (word page) 15 ns and access time from clock ±0.70–±0.75 ns depending on CAS latency selection.

Typical Applications

• High-speed memory subsystems Implements 256 Mbit DDR storage for designs that require parallel DDR DRAM with programmable latency and burst control.
• Board-level DRAM expansion Compact 144-ball MiniBGA package and SSTL_2 interface simplify integration into systems needing on-board DRAM capacity.
• Timing-sensitive designs On-die DLL and DQS/DQ alignment enable reliable data capture for systems operating at up to 200 MHz clock rate.

Unique Advantages

• DDR double-data-rate throughput: Data transfers on both clock edges increase effective bandwidth without increasing clock frequency.
• Flexible timing configuration: Programmable CAS latencies (2.0/2.5/3.0) and burst lengths (2/4/8) let designers tune latency and burst behavior to system needs.
• SSTL_2 differential clocking: Differential CLK and /CLK plus DQS support improve signal integrity and timing at high speeds.
• Compact BGA footprint: 144-ball MiniBGA (12×12 mm) provides a small board area for higher memory density on tight PCBs.
• Robust refresh capability: 4096 refresh cycles per 64 ms with auto and self-refresh modes simplify refresh management in multi-bank operation.

Why Choose IS43R32800B-5BL?

The IS43R32800B-5BL offers a straightforward 256 Mbit DDR SDRAM solution with a 4-bank architecture, on-die DLL, and SSTL_2-compatible interface for systems that need synchronous parallel DRAM at up to 200 MHz. Its programmable timing options and compact 144-ball MiniBGA package make it suitable for designs where predictable timing, board-level density, and standard DDR features are required.

This device is positioned for designers seeking a verified DDR memory component with defined electrical and timing characteristics (VDD/VDDQ = 2.5 V ±0.2 V, 0°C to +70°C) and documented refresh and burst behaviors that can be matched to system memory controllers.

For pricing, lead time, or to request a quote for IS43R32800B-5BL, please submit a quote request or contact sales with your part number and quantity requirements.