IS43R32160D-5BL

The IS43R32160D-5BL is a 512‑Mbit DDR SDRAM organized as 16M × 32 with a parallel memory interface in a 144‑ball LFBGA (12×12) package. It implements double‑data‑rate architecture with a DLL and differential clock inputs to support high‑throughput burst transactions.

Designed for commercial‑temperature systems (0°C to +70°C), the device targets applications that require compact, board‑level DRAM with programmable latency, selectable burst lengths and SSTL_2‑compatible I/O for synchronized data capture.

Key Features

• DDR SDRAM Architecture Double‑data‑rate operation provides two data transfers per clock cycle with DQS strobes for edge‑aligned read and center‑aligned write timing.
• Memory Organization 512 Mbit total capacity organized as 16M × 32 with four internal banks (four banks of 128 Mb) to support concurrent operations.
• Performance Rated for a clock frequency up to 200 MHz (speed grade -5, CL = 3) and an access time of 700 ps.
• Programmable Timing and Burst Burst lengths of 2, 4 and 8, sequential and interleave burst types, and programmable CAS latency options of 2, 2.5 and 3.
• SSTL_2‑Compatible I/O and Differential Clock SSTL_2 I/O signaling with differential clock inputs (CK and CK̄) and bidirectional DQS for robust data capture.
• On‑Die Features DLL alignment of DQ/DQS with CLK, auto refresh and self refresh modes, auto precharge support and T_RAS lockout (t_RAP = t_RCD).
• Power and Timing Supply voltage range 2.5 V to 2.7 V; write cycle time (word page) of 15 ns.
• Package and Temperature 144‑LFBGA (12×12) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Commercial embedded systems — Provides board‑level DRAM capacity for general embedded memory requirements within the 0°C to +70°C temperature range.
• Compact PCB designs — 144‑LFBGA (12×12) package allows high‑density placement when 512 Mbit DDR SDRAM is required.
• System memory for synchronous data transfer — DDR architecture with DQS and differential clocking supports burst transfers and synchronized read/write operations.

Unique Advantages

• Double‑data‑rate throughput: Two data transfers per clock cycle increase effective bandwidth without increasing clock frequency.
• SSTL_2 I/O with DQS strobes: Edge‑aligned DQS for reads and center‑aligned DQS for writes improve reliable data capture at both transmitter and receiver.
• Flexible timing options: Programmable CAS latency (2, 2.5, 3) and selectable burst lengths (2/4/8) enable designers to tune performance to system requirements.
• Compact, industry‑standard package: 144‑ball LFBGA (12×12) offers a small footprint for space‑constrained boards requiring parallel DDR memory.
• Commercial temperature grading: Rated for 0°C to +70°C operation for mainstream electronic equipment.
• Robust command and refresh support: DLL, auto refresh, self refresh and auto precharge simplify memory management in continuous and low‑power modes.

Why Choose IS43R32160D-5BL?

The IS43R32160D-5BL delivers a compact 512‑Mbit DDR SDRAM solution with programmable latency, burst flexibility and SSTL_2‑compatible I/O, making it suitable for commercial embedded designs that need synchronized, high‑throughput memory in a 144‑LFBGA footprint. Its combination of DDR architecture, DLL timing alignment and differential clock inputs supports reliable burst transfers and straightforward system integration.

This device is well suited for designers seeking a standardized parallel DDR memory component with defined timing and voltage ranges (2.5 V–2.7 V) and commercial operating temperature support, enabling predictable performance and simplified BOM choices for mainstream applications.

Request a quote or submit an inquiry to obtain pricing, availability and technical support for the IS43R32160D-5BL.