IS43R16800E-5TLI-TR

The IS43R16800E-5TLI-TR is a 128 Mbit volatile memory device from ISSI (Integrated Silicon Solution Inc). It is implemented as DDR SDRAM with an 8M × 16 memory organization and a parallel memory interface.

Designed for systems that require compact, high-speed parallel DRAM, this device delivers up to 200 MHz clock operation with a 700 ps access time and supports a supply voltage range of 2.3 V to 2.7 V. Its 66-TSSOP (66-TSOP II) package targets space-constrained board designs.

Key Features

• Memory Type & Technology  DDR SDRAM volatile memory offering 128 Mbit capacity implemented as an 8M × 16 organization.
• Performance  200 MHz maximum clock frequency with a specified access time of 700 ps and a write cycle time (word page) of 15 ns for time-critical memory operations.
• Power  Operates from a 2.3 V to 2.7 V supply range to match system power rails.
• Interface  Parallel memory interface for direct integration into parallel memory buses.
• Package  66-TSSOP / 66-TSOP II package with a 0.400" (10.16 mm) body width for compact board-level footprint.
• Operating Range  Specified ambient operating temperature range from −40 °C to 85 °C (TA).

Typical Applications

• Embedded Memory Subsystems  Provides 128 Mbit parallel DDR SDRAM capacity for embedded systems requiring an 8M × 16 memory organization and up to 200 MHz clocking.
• Compact Board Designs  66-TSOP II packaging supports space-constrained PCBs where a narrow footprint and standard TSOP form factor are required.
• High-Speed Parallel Interfaces  Suited for designs that need a parallel memory interface with sub-nanosecond access characteristics (700 ps).

Unique Advantages

• Parallel DDR Architecture:  DDR SDRAM with parallel interface supports conventional parallel memory bus architectures without implying additional interface logic.
• Defined Timing Performance:  700 ps access time and 15 ns write cycle time (word page) provide quantifiable timing for system memory budgeting.
• Industry-Standard Package:  66-TSSOP (66-TSOP II) package offers a compact, widely used footprint for streamlined board design.
• Narrow Voltage Window:  Operates from 2.3 V to 2.7 V, enabling straightforward integration with system power rails that meet this range.
• Extended Temperature Range:  Rated for −40 °C to 85 °C (TA) to support designs requiring wide ambient operating conditions.

Why Choose IC DRAM 128MBIT PAR 66TSOP II?

The IS43R16800E-5TLI-TR positions itself as a practical DDR SDRAM option for designs that require a compact 128 Mbit parallel memory device with defined timing and operating parameters. Its combination of 8M × 16 organization, 200 MHz clock capability, and 66-TSOP II packaging makes it suitable for systems where board space and deterministic memory timing are priorities.

Manufactured by ISSI (Integrated Silicon Solution Inc), this device is appropriate for engineers specifying parallel DDR memory with clear electrical, timing, and thermal specifications, facilitating predictable integration and system-level planning.

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