IS43R16800E-5TL-TR

The IS43R16800E-5TL-TR is a 128 Mbit volatile DRAM device implemented as DDR SDRAM with a parallel memory interface and an 8M × 16 organization. It targets designs that require a compact, low-voltage parallel DRAM solution with defined timing and operating conditions.

Key attributes include a 200 MHz clock capability, an access time of 700 ps, a write cycle time (word/page) of 15 ns, and a 66‑TSOP II (66‑TSSOP) package with 0.400" (10.16 mm) width. The device operates from 2.3 V to 2.7 V and within an ambient temperature range of 0 °C to 70 °C.

Key Features

• Core / Memory Architecture DDR SDRAM technology organized as 8M × 16 providing a total memory density of 128 Mbit in a parallel DRAM format.
• Performance Supports a clock frequency of 200 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns to meet defined timing requirements.
• Power Operates from a 2.3 V to 2.7 V supply range for low-voltage system integration.
• Package Supplied in a 66‑TSOP II / 66‑TSSOP package (0.400", 10.16 mm width) for compact board-level placement.
• Environmental / Operating Range Specified for operation over an ambient temperature range of 0 °C to 70 °C.

Unique Advantages

• Parallel DDR interface at 200 MHz: Enables integration where parallel DDR timing and throughput are required, tied directly to the specified clock frequency and timing values.
• 128 Mbit density with 8M × 16 organization: Provides a defined memory size and data bus organization for predictable addressing and system design.
• Low-voltage operation (2.3 V–2.7 V): Supports designs that require reduced supply voltages while delivering DDR SDRAM functionality.
• Compact 66‑TSOP II packaging: The 66‑TSSOP form factor (0.400", 10.16 mm width) offers a small footprint for space-constrained assemblies.
• Defined timing parameters: Access time (700 ps) and write cycle time (15 ns) provide clear timing targets for system timing closure.
• Specified operating temperature range: Rated for 0 °C to 70 °C ambient operation to match common commercial temperature requirements.

Why Choose IS43R16800E-5TL-TR?

The IS43R16800E-5TL-TR positions itself as a compact, low-voltage parallel DDR SDRAM option with clearly specified density, timing, and physical dimensions. Its combination of 128 Mbit capacity, 8M × 16 organization, 200 MHz clock capability, and 66‑TSOP II packaging makes it suitable for designs that require predictable parallel memory performance within a defined commercial temperature range.

Designers and procurement teams seeking a memory component with explicit electrical and mechanical specifications—voltage 2.3 V–2.7 V, access time 700 ps, write cycle time 15 ns, and 66‑TSSOP package dimensions—can rely on these published parameters for board-level integration and system timing planning.

Request a quote or contact sales to discuss availability, pricing, and lead times for the IS43R16800E-5TL-TR.