IS43R16800E-6TL
| Part Description |
IC DRAM 128MBIT PAR 66TSOP II |
|---|---|
| Quantity | 298 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 66-TSOP II | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.3V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 66-TSSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS43R16800E-6TL – IC DRAM 128MBIT PAR 66TSOP II
The IS43R16800E-6TL is a 128 Mbit volatile DRAM device organized as 8M × 16 and implemented as DDR SDRAM with a parallel memory interface. It is manufactured by Integrated Silicon Solution Inc (ISSI) and is supplied in a 66‑TSSOP / 66‑TSOP II package.
This device targets systems requiring mid-density, parallel DDR memory with a 166 MHz clock rate, offering a compact package and a commercial operating temperature range for general embedded and electronics applications.
Key Features
- Memory Type & Technology Volatile DRAM implemented as DDR SDRAM with a parallel memory interface.
- Organization & Capacity 128 Mbit capacity arranged as 8M × 16, suitable for designs needing this density and data width.
- Performance Rated clock frequency of 166 MHz with a specified access time of 700 ps and a write cycle time (word/page) of 12 ns.
- Power Operates from a 2.3 V to 2.7 V supply range.
- Package Supplied in a 66‑TSSOP (0.400", 10.16 mm width) / 66‑TSOP II package for compact board-level integration.
- Operating Conditions Specified for a commercial ambient temperature range of 0°C to 70°C (TA).
Unique Advantages
- Mid‑range density: 128 Mbit (8M × 16) provides a balance of capacity and footprint for space‑constrained designs.
- Parallel DDR interface: DDR SDRAM architecture with parallel interface supports higher data throughput at a 166 MHz clock rate.
- Fast access characteristics: 700 ps access time and 12 ns write cycle time help meet timing requirements for many embedded memory subsystems.
- Low‑voltage operation: 2.3 V to 2.7 V supply range reduces power budget compared with higher-voltage alternatives.
- Compact package: 66‑TSSOP / 66‑TSOP II package enables dense PCB routing and small board area usage.
- Commercial temperature support: Rated for 0°C to 70°C (TA), aligning with standard commercial environment requirements.
Why Choose IS43R16800E-6TL?
The IS43R16800E-6TL combines a 128 Mbit DDR SDRAM architecture with a parallel interface and a compact 66‑TSSOP / 66‑TSOP II package, delivering a practical balance of density, performance, and board-level integration. Its 166 MHz clock rating, 700 ps access time, and 12 ns write cycle time make it suitable for designs that require responsive, mid-density volatile memory within a commercial temperature range.
Manufactured by Integrated Silicon Solution Inc (ISSI), this device is appropriate for engineers and procurement teams specifying parallel DDR memory at the 128 Mbit capacity point where package compactness and low-voltage operation are important considerations.
Request a quote or contact sales to discuss availability, lead times, and pricing for the IS43R16800E-6TL.
